Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade
文献类型：期刊论文
| 作者 | Fadeyev, V; Galloway, Z; Grabas, H; Grillo, AA; Liang, Z; Martinez-Mckinney, F; Seiden, A; Volk, J; Affolder, A; Buckland, M |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
 |
| 出版日期 | 2016 |
| 卷号 | 831页码:189-196 |
| 关键词 | Silicon Sensor HV-CMOS HR-CMOS Tracker |
| DOI | 10.1016/j.nima.2016.05.092 |
| 文献子类 | Article; Proceedings Paper |
| 英文摘要 | ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HRCMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation. (C) 2016 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000382255800035 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/260863]  |
| 专题 | 高能物理研究所_实验物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Fadeyev, V,Galloway, Z,Grabas, H,et al. Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2016,831:189-196. |
| APA | Fadeyev, V.,Galloway, Z.,Grabas, H.,Grillo, AA.,Liang, Z.,...&朱宏博.(2016).Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,831,189-196. |
| MLA | Fadeyev, V,et al."Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 831(2016):189-196. |
入库方式： OAI收割
来源：高能物理研究所
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