Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 018 mu m CMOS process
文献类型：期刊论文
| 作者 | Zhang Y(张颖) ; Zhu HB(朱宏博); Zhang, Y; Zhu, HB; Zhang, L; Fu, M
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
 |
| 出版日期 | 2016 |
| 卷号 | 831页码:99-104 |
| 关键词 | CEPC vertex detector CPS TCAD simulation Charge collection Radiation damage |
| DOI | 10.1016/j.nima.2016.03.031 |
| 文献子类 | Article; Proceedings Paper |
| 英文摘要 | The proposed Circular Electron Positron Collider (CEPC) will be primarily aimed for precision measurements of the discovered Higgs boson. Its innermost vertex detector, which will play a critical role in heavy-flavor tagging, must be constructed with fine-pitched silicon pixel sensors with low power consumption and fast readout. CMOS pixel sensor (CPS), as one of the most promising candidate technologies, has already demonstrated its excellent performance in several high energy physics experiments. Therefore it has been considered for R&D for the CEPC vertex detector. In this paper, we present the preliminary studies to improve the collected signal charge over the equivalent input capacitance ratio (WC), which will be crucial to reduce the analog power consumption. We have performed detailed 3D device simulation and evaluated potential impacts from diode geometry, epitaxial layer properties and non-ionizing radiation damage. We have proposed a new approach to improve the treatment of the boundary conditions in simulation. Along with the TCAD simulation, we have designed the exploratory prototype utilizing the TowerJazz 0.18 mu m CMOS imaging sensor process and we will verify the simulation results with future measurements. (C) 2016 Elsevier B.V. All rights reserved. |
| WOS关键词 | HIGH-ENERGY-PHYSICS ; SILICON DETECTORS ; PARTICLE TRACKING ; SIMULATION ; PERFORMANCE ; BOSON ; LHC |
| 语种 | 英语 |
| WOS记录号 | WOS:000382255800021 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/260873]  |
| 专题 | 中国科学院高能物理研究所 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhang Y,Zhu HB,Zhang, Y,et al. Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 018 mu m CMOS process[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2016,831:99-104. |
| APA | 张颖,朱宏博,Zhang, Y,Zhu, HB,Zhang, L,&Fu, M.(2016).Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 018 mu m CMOS process.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,831,99-104. |
| MLA | 张颖,et al."Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 018 mu m CMOS process".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 831(2016):99-104. |
入库方式： OAI收割
来源：高能物理研究所
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