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Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project

文献类型:期刊论文

作者Huffman, BT; Affolder, A; Arndt, K; Bates, R; Benoit, M; Di Bello, F; Blue, A; Bortoletto, D; Buckland, M; Buttar, C
刊名JOURNAL OF INSTRUMENTATION
出版日期2016
卷号11
关键词Radiation damage to electronic components Solid state detectors Radiation-hard detectors Particle tracking detectors (Solid-state detectors)
DOI10.1088/1748-0221/11/02/C02005
文献子类Article; Proceedings Paper
英文摘要The LHC luminosity upgrade, known as the High Luminosity LHC (HL-LHC), will require the replacement of the existing silicon strip tracker and the transistion radiation tracker. Although a baseline design for this tracker exists the ATLAS collaboration and other non-ATLAS groups are exploring the feasibility of using CMOS Monolithic Active Pixel Sensors (MAPS) which would be arranged in a strip-like fashion and would take advantage of the service and support structure already being developed for the upgrade. Two test devices made with theAMSH35 process (a High voltage or HV CMOS process) have been subjected to various radiation environments and have performed well. The results of these tests are presented in this paper.
WOS关键词PIXEL DETECTORS ; TECHNOLOGY
语种英语
WOS记录号WOS:000371479800005
源URL[http://ir.ihep.ac.cn/handle/311005/260991]  
专题高能物理研究所_实验物理中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714
Huffman, BT,Affolder, A,Arndt, K,et al. Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project[J]. JOURNAL OF INSTRUMENTATION,2016,11.
APA Huffman, BT.,Affolder, A.,Arndt, K.,Bates, R.,Benoit, M.,...&朱宏博.(2016).Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project.JOURNAL OF INSTRUMENTATION,11.
MLA Huffman, BT,et al."Radiation hardness of two CMOS prototypes for the ATLAS HL-LHC upgrade project".JOURNAL OF INSTRUMENTATION 11(2016).

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来源:高能物理研究所

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