molecular dynamics simulation of hydrogenated carbon film growth from ch radicals
文献类型:期刊论文
作者 | Quan W.L. ; Sun X.W. ; Song Q. ; Fu Z.J. ; Guo P. ; Tian J.H. ; Chen J.M. |
刊名 | Applied Surface Science
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出版日期 | 2012 |
卷号 | 263页码:339-344 |
关键词 | Deposits Film growth Hydrogenation Molecular dynamics Molecular mechanics |
ISSN号 | 0169-4332 |
中文摘要 | The growth of hydrogenated carbon film from CH radicals is studied by classical molecular dynamics simulation for various incident energies (3.25-130 eV). The impingement of CH radical and its effect on the microstructure of formed film are carefully analyzed. It is found that the sp3-C fraction is almost identical to the H concentration for all films; both of them decrease with increasing incident energy. To deposit hydrogenated carbon film with fine smoothness, the energy of incident CH should be 10-70 eV. At other energies (either lower or higher), deposited films are of roughness and with some chain-like structures at surface. Different growth mechanisms behind these observations are discussed. © 2012 Elsevier B.V. |
英文摘要 | The growth of hydrogenated carbon film from CH radicals is studied by classical molecular dynamics simulation for various incident energies (3.25-130 eV). The impingement of CH radical and its effect on the microstructure of formed film are carefully analyzed. It is found that the sp3-C fraction is almost identical to the H concentration for all films; both of them decrease with increasing incident energy. To deposit hydrogenated carbon film with fine smoothness, the energy of incident CH should be 10-70 eV. At other energies (either lower or higher), deposited films are of roughness and with some chain-like structures at surface. Different growth mechanisms behind these observations are discussed. © 2012 Elsevier B.V. |
收录类别 | EI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iscas.ac.cn/handle/311060/15405] ![]() |
专题 | 软件研究所_软件所图书馆_期刊论文 |
推荐引用方式 GB/T 7714 | Quan W.L.,Sun X.W.,Song Q.,et al. molecular dynamics simulation of hydrogenated carbon film growth from ch radicals[J]. Applied Surface Science,2012,263:339-344. |
APA | Quan W.L..,Sun X.W..,Song Q..,Fu Z.J..,Guo P..,...&Chen J.M..(2012).molecular dynamics simulation of hydrogenated carbon film growth from ch radicals.Applied Surface Science,263,339-344. |
MLA | Quan W.L.,et al."molecular dynamics simulation of hydrogenated carbon film growth from ch radicals".Applied Surface Science 263(2012):339-344. |
入库方式: OAI收割
来源:软件研究所
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