中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model

文献类型:会议论文

作者Xia Chang Sheng ; Simon Li Z.M. ; Sheng Yang ; Cheng Li Wen ; Da Hu Wei ; Lu Wei
出版日期2012
会议名称12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012
会议日期August 28, 2012 - August 31, 2012
会议地点Shanghai, China
关键词Computer simulation Light emitting diodes Models Optoelectronic devices
页码21-22
中文摘要Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs. © 2012 IEEE.
英文摘要Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs. © 2012 IEEE.
收录类别EI
会议录Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
语种英语
ISSN号2158-3234
ISBN号9781467316040
源URL[http://ir.iscas.ac.cn/handle/311060/15941]  
专题软件研究所_软件所图书馆_会议论文
推荐引用方式
GB/T 7714
Xia Chang Sheng,Simon Li Z.M.,Sheng Yang,et al. simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model[C]. 见:12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012. Shanghai, China. August 28, 2012 - August 31, 2012.

入库方式: OAI收割

来源:软件研究所

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