simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model
文献类型:会议论文
作者 | Xia Chang Sheng ; Simon Li Z.M. ; Sheng Yang ; Cheng Li Wen ; Da Hu Wei ; Lu Wei |
出版日期 | 2012 |
会议名称 | 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012 |
会议日期 | August 28, 2012 - August 31, 2012 |
会议地点 | Shanghai, China |
关键词 | Computer simulation Light emitting diodes Models Optoelectronic devices |
页码 | 21-22 |
中文摘要 | Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs. © 2012 IEEE. |
英文摘要 | Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model. The simulation results are in good agreement with experiment and indicate the non-local quantum well transport model has a significant influence on the radiative recombination, the carrier transport and the current crowding of the InGaN/GaN MQW LEDs. © 2012 IEEE. |
收录类别 | EI |
会议录 | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
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语种 | 英语 |
ISSN号 | 2158-3234 |
ISBN号 | 9781467316040 |
源URL | [http://ir.iscas.ac.cn/handle/311060/15941] ![]() |
专题 | 软件研究所_软件所图书馆_会议论文 |
推荐引用方式 GB/T 7714 | Xia Chang Sheng,Simon Li Z.M.,Sheng Yang,et al. simulation of ingan/gan light-emitting diodes with a non-local quantum well transport model[C]. 见:12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012. Shanghai, China. August 28, 2012 - August 31, 2012. |
入库方式: OAI收割
来源:软件研究所
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