numerical simulation of high-efficiency ingap/gaas/ingaas triple-junction solar cells grown on gaas substrate
文献类型：会议论文
| 作者 | Liang J. ; Hu W.D. ; Chen X.S. ; Xia C.S. ; Cheng L.W. |
| 出版日期 | 2012 |
| 会议名称 | 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012 |
| 会议日期 | August 28, 2012 - August 31, 2012 |
| 会议地点 | Shanghai, China |
| 关键词 | Computer simulation Conversion efficiency Gallium arsenide Optimization Solar cells |
| 页码 | 35-36 |
| 中文摘要 | The structure parameters and illumination condition for InGaP/GaAs/InGaAs triple-junction solar cells grown on GaAs substrate have been numerically studied to search the optimal point of device performance. The dependences of conversion efficiency, I-V curves, and band diagram on the structure parameters and illumination condition have been investigated. Our work shows that the performances are largely dependent on the geometric design of device and the optimal parameters are extracted. © 2012 IEEE. |
| 英文摘要 | The structure parameters and illumination condition for InGaP/GaAs/InGaAs triple-junction solar cells grown on GaAs substrate have been numerically studied to search the optimal point of device performance. The dependences of conversion efficiency, I-V curves, and band diagram on the structure parameters and illumination condition have been investigated. Our work shows that the performances are largely dependent on the geometric design of device and the optimal parameters are extracted. © 2012 IEEE. |
| 收录类别 | EI |
| 会议录 | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
 |
| 语种 | 英语 |
| ISSN号 | 2158-3234 |
| ISBN号 | 9781467316040 |
| 源URL | [http://ir.iscas.ac.cn/handle/311060/15942]  |
| 专题 | 软件研究所_软件所图书馆_会议论文 |
| 推荐引用方式 GB/T 7714 | Liang J.,Hu W.D.,Chen X.S.,et al. numerical simulation of high-efficiency ingap/gaas/ingaas triple-junction solar cells grown on gaas substrate[C]. 见:12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012. Shanghai, China. August 28, 2012 - August 31, 2012. |
入库方式： OAI收割
来源：软件研究所
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