simulation of ingan/gan light-emitting diodes with patterned sapphire substrate
文献类型：会议论文
| 作者 | Sheng Yang ; Xia Chang Sheng ; Simon Li Z.M. ; Cheng Li Wen |
| 出版日期 | 2012 |
| 会议名称 | 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012 |
| 会议日期 | August 28, 2012 - August 31, 2012 |
| 会议地点 | Shanghai, China |
| 关键词 | Computer simulation Efficiency Extraction Finite difference time domain method Gallium nitride Optoelectronic devices Sapphire Semiconductor quantum wells Three dimensional computer graphics Time domain analysis |
| 页码 | 23-24 |
| 中文摘要 | Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED. © 2012 IEEE. |
| 英文摘要 | Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with patterned sapphire substrate (PSS) are simulated by the APSYS software. Approach of combining finite-difference time-domain (FDTD) method and ray tracing technique is applied to perform light extraction. The simulation results show that PSS dramatically increases extraction efficiency of light power, in agreement with experiment. It is found that extraction efficiency can be maximized by changing the shape of PSS. This work presents a new approach to combine electrical simulation with FDTD and raytracing for both accuracy and efficiency in 3D TCAD simulation of GaN-LED. © 2012 IEEE. |
| 收录类别 | EI |
| 会议录 | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
 |
| 语种 | 英语 |
| ISSN号 | 2158-3234 |
| ISBN号 | 9781467316040 |
| 源URL | [http://ir.iscas.ac.cn/handle/311060/15947]  |
| 专题 | 软件研究所_软件所图书馆_会议论文 |
| 推荐引用方式 GB/T 7714 | Sheng Yang,Xia Chang Sheng,Simon Li Z.M.,et al. simulation of ingan/gan light-emitting diodes with patterned sapphire substrate[C]. 见:12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012. Shanghai, China. August 28, 2012 - August 31, 2012. |
入库方式： OAI收割
来源：软件研究所
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