a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package
文献类型：会议论文
| 作者 | Cheng Liwen ; Sheng Yang ; Chang Shengxia ; Hu Weida ; Lu Wei |
| 出版日期 | 2012 |
| 会议名称 | 12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012 |
| 会议日期 | August 28, 2012 - August 31, 2012 |
| 会议地点 | Shanghai, China |
| 关键词 | Computer simulation Gallium alloys Gallium nitride Heat transfer Optoelectronic devices Transient analysis |
| 页码 | 51-52 |
| 中文摘要 | The transient response of the junction temperature of packaged high-power GaN-based light-emitting diodes (LEDs) is numerically simulated. We found the heat transport in LEDs involves two evident processes and can be characterized by a bisection function. One process involves heat transfer from a LED chip to its slug submount, whereas the other involves the heat transfer from the slug submount to the ambient through the heat sink. The thermal time constant of the two processes are identifiable. The time constant of the first process is in millisecond order of magnitude, whereas that of the other process is in hundred-second order of magnitude. The thermal resistance in the two processes can be obtained by analyzing the transient response curve of the junction temperature. © 2012 IEEE. |
| 英文摘要 | The transient response of the junction temperature of packaged high-power GaN-based light-emitting diodes (LEDs) is numerically simulated. We found the heat transport in LEDs involves two evident processes and can be characterized by a bisection function. One process involves heat transfer from a LED chip to its slug submount, whereas the other involves the heat transfer from the slug submount to the ambient through the heat sink. The thermal time constant of the two processes are identifiable. The time constant of the first process is in millisecond order of magnitude, whereas that of the other process is in hundred-second order of magnitude. The thermal resistance in the two processes can be obtained by analyzing the transient response curve of the junction temperature. © 2012 IEEE. |
| 收录类别 | EI |
| 会议录 | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
 |
| 语种 | 英语 |
| ISSN号 | 2158-3234 |
| ISBN号 | 9781467316040 |
| 源URL | [http://ir.iscas.ac.cn/handle/311060/15963]  |
| 专题 | 软件研究所_软件所图书馆_会议论文 |
| 推荐引用方式 GB/T 7714 | Cheng Liwen,Sheng Yang,Chang Shengxia,et al. a bisection-function technique to characterize heat transport in high-power gan-based light-emitting-diodes package[C]. 见:12th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2012. Shanghai, China. August 28, 2012 - August 31, 2012. |
入库方式： OAI收割
来源：软件研究所
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