The relaxation limits to the bipolar hydrodynamic model for semiconductors
文献类型：期刊论文
| 作者 | Ling, H; Mauser, NJ; Zhang, KJ |
| 刊名 | APPLIED MATHEMATICS LETTERS
 |
| 出版日期 | 2004 |
| 卷号 | 17期号:1页码:95-100 |
| 关键词 | semiconductors bipolar hydrodynamic model zero relaxation limits |
| ISSN号 | 0893-9659 |
| DOI | 10.1016/S0893-9659(03)00225-8 |
| 英文摘要 | Zero relaxation limit results of weak solutions of the initial-boundary value problem to the bipolar hydrodynamic model with the general pressure-density relation for semiconductors axe established by the method of high energy estimates. (C) 2004 Elsevier Ltd. All rights reserved. |
| WOS研究方向 | Mathematics |
| 语种 | 英语 |
| WOS记录号 | WOS:000188398400018 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| 源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/629]  |
| 专题 | 中国科学院数学与系统科学研究院 |
| 通讯作者 | Ling, H |
| 作者单位 | 1.CAS, Acad Math & Syst Sci, Beijing 100080, Peoples R China 2.Univ Vienna, Inst Math, A-1090 Vienna, Austria 3.NE Normal Univ, Dept Math, Changchun 130024, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ling, H,Mauser, NJ,Zhang, KJ. The relaxation limits to the bipolar hydrodynamic model for semiconductors[J]. APPLIED MATHEMATICS LETTERS,2004,17(1):95-100. |
| APA | Ling, H,Mauser, NJ,&Zhang, KJ.(2004).The relaxation limits to the bipolar hydrodynamic model for semiconductors.APPLIED MATHEMATICS LETTERS,17(1),95-100. |
| MLA | Ling, H,et al."The relaxation limits to the bipolar hydrodynamic model for semiconductors".APPLIED MATHEMATICS LETTERS 17.1(2004):95-100. |
入库方式： OAI收割
来源：数学与系统科学研究院
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。