Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors
文献类型：期刊论文
| 作者 | Chen, L; Hsiao, L; Li, Y |
| 刊名 | JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS
 |
| 出版日期 | 2005-12-15 |
| 卷号 | 312期号:2页码:596-619 |
| 关键词 | energy transport drift diffusion large time behavior energy relaxation time limit entropy inequality |
| ISSN号 | 0022-247X |
| DOI | 10.1016/j.jmaa.2005.03.063 |
| 英文摘要 | In this paper, the global existence and the large time behavior of smooth solutions to the initial boundary value problem for the multi-dimensional energy transport model are studied. It is also proved that the solutions of the problem converge to an isothermal drift-diffusion model as energy relaxation time tau goes to 0 by compactness argument with the help of energy estimates and entropy inequality. (c) 2005 Elsevier Inc. All rights reserved. |
| WOS研究方向 | Mathematics |
| 语种 | 英语 |
| WOS记录号 | WOS:000233281500016 |
| 出版者 | ACADEMIC PRESS INC ELSEVIER SCIENCE |
| 源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/1509]  |
| 专题 | 中国科学院数学与系统科学研究院 |
| 通讯作者 | Li, Y |
| 作者单位 | 1.Tsing Hua Univ, Dept Math Sci, Beijing 100084, Peoples R China 2.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, L,Hsiao, L,Li, Y. Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors[J]. JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS,2005,312(2):596-619. |
| APA | Chen, L,Hsiao, L,&Li, Y.(2005).Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors.JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS,312(2),596-619. |
| MLA | Chen, L,et al."Large time behavior and energy relaxation time limit of the solutions to an energy transport model in semiconductors".JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS 312.2(2005):596-619. |
入库方式： OAI收割
来源：数学与系统科学研究院
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