Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
文献类型：期刊论文
| 作者 | Hsiao, L; Wang, S |
| 刊名 | JOURNAL OF DIFFERENTIAL EQUATIONS
 |
| 出版日期 | 2006-06-15 |
| 卷号 | 225期号:2页码:411-439 |
| 关键词 | quasineutral limit time-dependent drift-diffusion equations p-n junction multiple scaling asymptotic expansions gimel-weighted Liapunov-type functional |
| ISSN号 | 0022-0396 |
| DOI | 10.1016/j.jde.2006.01.022 |
| 英文摘要 | In this paper the vanishing Debye length limit of the bipolar time-dependent drift-diffusion-Poisson equations modelling insulated semiconductor devices with p-n junctions (i.e., with a fixed bipolar background charge) is studied. For sign-changing and smooth doping profile with 'good' boundary conditions the quasineutral limit (zero-Debye-length limit) is performed rigorously by using the multiple scaling asymptotic expansions of a singular perturbation analysis and the carefully performed classical energy methods. The key point in the proof is to introduce a 'density' transform and two L-weighted Liapunov-type functionals first, and then to establish the entropy production integration inequality, which yields the uniform estimate with respect to the scaled Debye length. The basic point of the idea involved here is to control strong nonlinear oscillation by the interaction between the entropy and the entropy dissipation. (c) 2006 Elsevier Inc. All rights reserved. |
| WOS研究方向 | Mathematics |
| 语种 | 英语 |
| WOS记录号 | WOS:000238101400002 |
| 出版者 | ACADEMIC PRESS INC ELSEVIER SCIENCE |
| 源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/3284]  |
| 专题 | 中国科学院数学与系统科学研究院 |
| 通讯作者 | Wang, S |
| 作者单位 | 1.Beijing Univ Technol, Coll Appl Sci, Beijing 100022, Peoples R China 2.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hsiao, L,Wang, S. Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2006,225(2):411-439. |
| APA | Hsiao, L,&Wang, S.(2006).Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices.JOURNAL OF DIFFERENTIAL EQUATIONS,225(2),411-439. |
| MLA | Hsiao, L,et al."Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices".JOURNAL OF DIFFERENTIAL EQUATIONS 225.2(2006):411-439. |
入库方式： OAI收割
来源：数学与系统科学研究院
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