Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile
文献类型：期刊论文
| 作者 | Hsiao Ling1; Ju QiangChang2; Wang Shu3 |
| 刊名 | SCIENCE IN CHINA SERIES A-MATHEMATICS
 |
| 出版日期 | 2008-09-01 |
| 卷号 | 51期号:9页码:1619-1630 |
| 关键词 | quasi-neutral limit drift-diffusion equations multiple scaling asymptotic expansions |
| ISSN号 | 1006-9283 |
| DOI | 10.1007/s11425-008-0039-6 |
| 英文摘要 | The quasi-neutral limit of time-dependent drift diffusion model with general sign-changing doping profile is justified rigorously in super-norm (i.e., uniformly in space). This improves the spatial square norm limit by Wang, Xin and Markowich. |
| WOS研究方向 | Mathematics |
| 语种 | 英语 |
| WOS记录号 | WOS:000258251100005 |
| 出版者 | SCIENCE PRESS |
| 源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/6514]  |
| 专题 | 中国科学院数学与系统科学研究院 |
| 通讯作者 | Hsiao Ling |
| 作者单位 | 1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China 2.Inst Appl Phys & Computat Math, Beijing 100088, Peoples R China 3.Beijing Univ Technol, Coll Sci, Beijing 100022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hsiao Ling,Ju QiangChang,Wang Shu. Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS,2008,51(9):1619-1630. |
| APA | Hsiao Ling,Ju QiangChang,&Wang Shu.(2008).Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile.SCIENCE IN CHINA SERIES A-MATHEMATICS,51(9),1619-1630. |
| MLA | Hsiao Ling,et al."Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile".SCIENCE IN CHINA SERIES A-MATHEMATICS 51.9(2008):1619-1630. |
入库方式： OAI收割
来源：数学与系统科学研究院
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