The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations
文献类型：期刊论文
| 作者 | Hsiao, L; Zhang, KJ |
| 刊名 | JOURNAL OF DIFFERENTIAL EQUATIONS
 |
| 出版日期 | 2000-08-10 |
| 卷号 | 165期号:2页码:315-354 |
| 关键词 | hydrodynamic model global weak solution zero relaxation limit traces of weak solutions compensated compactness Godunov scheme |
| ISSN号 | 0022-0396 |
| 英文摘要 | We establish the convergence and consistency of approximate solutions derived hy the modified Godunov scheme for the initial-boundary value problem to a simplified one-dimensional hydrodynamic model for semiconductors using the compensated compactness method. The traces of weak solutions are introduced and then the weak solutions are proved to satisfy the natural boundary conditions. The zero relaxation limit of the hydrodynamic model to the drift-diffusion model is proved when the momentum relaxation time tends to zero. (C) 2000 Academic Press. |
| WOS研究方向 | Mathematics |
| 语种 | 英语 |
| WOS记录号 | WOS:000088679600002 |
| 出版者 | ACADEMIC PRESS INC |
| 源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/15056]  |
| 专题 | 中国科学院数学与系统科学研究院 |
| 通讯作者 | Hsiao, L |
| 作者单位 | CAS, Acad Math & Syst Sci, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hsiao, L,Zhang, KJ. The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2000,165(2):315-354. |
| APA | Hsiao, L,&Zhang, KJ.(2000).The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations.JOURNAL OF DIFFERENTIAL EQUATIONS,165(2),315-354. |
| MLA | Hsiao, L,et al."The relaxation of the hydrodynamic model for semiconductors to the drift-diffusion equations".JOURNAL OF DIFFERENTIAL EQUATIONS 165.2(2000):315-354. |
入库方式： OAI收割
来源：数学与系统科学研究院
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