On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors
文献类型：期刊论文
| 作者 | Zhang, KJ |
| 刊名 | JOURNAL OF DIFFERENTIAL EQUATIONS
 |
| 出版日期 | 2001-04-10 |
| 卷号 | 171期号:2页码:251-293 |
| 关键词 | bipolar hydrodynamic model compensated compactness trace of weak solutions zero relaxation limits |
| ISSN号 | 0022-0396 |
| DOI | 10.1006/jdeq.2000.3850 |
| 英文摘要 | The global existance and zero relaxation limit results of weak solutions of the initial-boundary value problem to the bipolar hydrodynamic model for semiconductors are established by the theory of compensated compactness. The boundary conditions of weak solutions in the sense of tracts are discussed. (C) 2001 Academic Press. |
| 语种 | 英语 |
| WOS记录号 | WOS:000167877800003 |
| 出版者 | ACADEMIC PRESS INC |
| 源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/16213]  |
| 专题 | 中国科学院数学与系统科学研究院 |
| 通讯作者 | Zhang, KJ |
| 作者单位 | 1.Acad Sinica, Inst Math, Beijing 100080, Peoples R China 2.Univ Toulouse 3, F-31062 Toulouse, France |
| 推荐引用方式 GB/T 7714 | Zhang, KJ. On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2001,171(2):251-293. |
| APA | Zhang, KJ.(2001).On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors.JOURNAL OF DIFFERENTIAL EQUATIONS,171(2),251-293. |
| MLA | Zhang, KJ."On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors".JOURNAL OF DIFFERENTIAL EQUATIONS 171.2(2001):251-293. |
入库方式： OAI收割
来源：数学与系统科学研究院
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