中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors

文献类型:期刊论文

作者Hsiao, L; Wang, S
刊名CHINESE ANNALS OF MATHEMATICS SERIES B
出版日期2001-04-01
卷号22期号:2页码:195-210
关键词hydrodynamic model semiconductors asymptotic behavior global smooth solution zero relaxation limit
ISSN号0252-9599
英文摘要The authors study the asymptotic behavior of the smooth solutions to the Cauchy problems for two macroscopic models (hydrodynamic and drift-diffusion models) for semiconductors and the related relaxation limit problem. First, it is proved that the solutions to these two systems converge to the unique stationary solution time asymptotically without the smallness assumption on doping profile. Then, very sharp estimates on the smooth solutions, independent of the relaxation time, are obtained and used to establish the zero relaxation limit.
WOS研究方向Mathematics
语种英语
WOS记录号WOS:000169176500007
出版者BALTZER SCI PUBL BV
源URL[http://ir.amss.ac.cn/handle/2S8OKBNM/16607]  
专题中国科学院数学与系统科学研究院
作者单位1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
2.Henan Univ, Dept Math, Kaifeng 475001, Peoples R China
推荐引用方式
GB/T 7714
Hsiao, L,Wang, S. The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors[J]. CHINESE ANNALS OF MATHEMATICS SERIES B,2001,22(2):195-210.
APA Hsiao, L,&Wang, S.(2001).The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors.CHINESE ANNALS OF MATHEMATICS SERIES B,22(2),195-210.
MLA Hsiao, L,et al."The asymptotic behavior of global smooth solutions to the macroscopic models for semiconductors".CHINESE ANNALS OF MATHEMATICS SERIES B 22.2(2001):195-210.

入库方式: OAI收割

来源:数学与系统科学研究院

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