On the relaxation limits of the hydrodynamic model for semiconductor devices
文献类型：期刊论文
| 作者 | Qiu, YC; Zhang, KJ |
| 刊名 | MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES
 |
| 出版日期 | 2002-03-01 |
| 卷号 | 12期号:3页码:333-363 |
| 关键词 | global weak solution trace of weak solution relaxation limit compensated compactness Godunov scheme semiconductor hydrodynamic model |
| ISSN号 | 0218-2025 |
| 英文摘要 | The initial-boundary value problem of a simplified one-dimensional hydrodynamic model for semiconductors is considered. The global weak solution and its relaxation limit are obtained through using the compensated compactness methods. The traces of weak solutions axe also discussed. |
| WOS研究方向 | Mathematics |
| 语种 | 英语 |
| WOS记录号 | WOS:000174918900002 |
| 出版者 | WORLD SCIENTIFIC PUBL CO PTE LTD |
| 源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/16941]  |
| 专题 | 中国科学院数学与系统科学研究院 |
| 通讯作者 | Qiu, YC |
| 作者单位 | 1.Univ Toulouse 3, CNRS, UMR 5640, MIP, F-31062 Toulouse 04, France 2.Acad Sinica, Inst Math, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qiu, YC,Zhang, KJ. On the relaxation limits of the hydrodynamic model for semiconductor devices[J]. MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,2002,12(3):333-363. |
| APA | Qiu, YC,&Zhang, KJ.(2002).On the relaxation limits of the hydrodynamic model for semiconductor devices.MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,12(3),333-363. |
| MLA | Qiu, YC,et al."On the relaxation limits of the hydrodynamic model for semiconductor devices".MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES 12.3(2002):333-363. |
入库方式： OAI收割
来源：数学与系统科学研究院
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