中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Quasineutral limit of a standard drift diffusion model for semiconductors

文献类型:期刊论文

作者Xiao, L; Markowich, PA; Wang, S
刊名SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
出版日期2002
卷号45期号:1页码:33-41
关键词quasineutral limit nonlinear drift-diffusion equations entropy method
ISSN号1006-9283
英文摘要The limit of vanishing Debye length (charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without pn-junction (i. e. without a bipolar background charge) is studied. The quasineutral limit (zero-Debye-length limit) is performed rigorously by using the weak compactness argument and the so-called entropy functional which yields appropriate uniform estimates.
WOS研究方向Mathematics
语种英语
WOS记录号WOS:000175241700004
出版者SCIENCE CHINA PRESS
源URL[http://ir.amss.ac.cn/handle/2S8OKBNM/17061]  
专题中国科学院数学与系统科学研究院
通讯作者Xiao, L
作者单位1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
2.Univ Vienna, Math Inst, A-1090 Vienna, Austria
3.Henan Univ, Dept Math, Kaifeng 475001, Peoples R China
推荐引用方式
GB/T 7714
Xiao, L,Markowich, PA,Wang, S. Quasineutral limit of a standard drift diffusion model for semiconductors[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,2002,45(1):33-41.
APA Xiao, L,Markowich, PA,&Wang, S.(2002).Quasineutral limit of a standard drift diffusion model for semiconductors.SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,45(1),33-41.
MLA Xiao, L,et al."Quasineutral limit of a standard drift diffusion model for semiconductors".SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY 45.1(2002):33-41.

入库方式: OAI收割

来源:数学与系统科学研究院

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。