Quasineutral limit of a standard drift diffusion model for semiconductors
文献类型:期刊论文
作者 | Xiao, L; Markowich, PA; Wang, S |
刊名 | SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
![]() |
出版日期 | 2002 |
卷号 | 45期号:1页码:33-41 |
关键词 | quasineutral limit nonlinear drift-diffusion equations entropy method |
ISSN号 | 1006-9283 |
英文摘要 | The limit of vanishing Debye length (charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without pn-junction (i. e. without a bipolar background charge) is studied. The quasineutral limit (zero-Debye-length limit) is performed rigorously by using the weak compactness argument and the so-called entropy functional which yields appropriate uniform estimates. |
WOS研究方向 | Mathematics |
语种 | 英语 |
WOS记录号 | WOS:000175241700004 |
出版者 | SCIENCE CHINA PRESS |
源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/17061] ![]() |
专题 | 中国科学院数学与系统科学研究院 |
通讯作者 | Xiao, L |
作者单位 | 1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China 2.Univ Vienna, Math Inst, A-1090 Vienna, Austria 3.Henan Univ, Dept Math, Kaifeng 475001, Peoples R China |
推荐引用方式 GB/T 7714 | Xiao, L,Markowich, PA,Wang, S. Quasineutral limit of a standard drift diffusion model for semiconductors[J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,2002,45(1):33-41. |
APA | Xiao, L,Markowich, PA,&Wang, S.(2002).Quasineutral limit of a standard drift diffusion model for semiconductors.SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,45(1),33-41. |
MLA | Xiao, L,et al."Quasineutral limit of a standard drift diffusion model for semiconductors".SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY 45.1(2002):33-41. |
入库方式: OAI收割
来源:数学与系统科学研究院
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。