Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
文献类型：期刊论文
| 作者 | Gasser, I; Hsiao, L; Markowich, PA; Wang, S |
| 刊名 | JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS
 |
| 出版日期 | 2002-04-01 |
| 卷号 | 268期号:1页码:184-199 |
| 关键词 | quasi-neutral limit nonlinear drift-diffusion equations entropy method |
| ISSN号 | 0022-247X |
| DOI | 10.1006/jmaa.2001.7813 |
| 英文摘要 | The limit of the vanishing Debye length (the charge neutral limit) in a nonlinear bipolar drift-diffusion model for semiconductors without a pn-junction (i.e., with a unipolar background charge) is studied. The quasi-neutral limit (zero-Debye-length limit) is determined rigorously by using the so-called entropy functional which yields appropriate uniform estimates. (C) 2002 Elsevier Science (USA). |
| WOS研究方向 | Mathematics |
| 语种 | 英语 |
| WOS记录号 | WOS:000174952900013 |
| 出版者 | ACADEMIC PRESS INC ELSEVIER SCIENCE |
| 源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/17537]  |
| 专题 | 中国科学院数学与系统科学研究院 |
| 通讯作者 | Gasser, I |
| 作者单位 | 1.Univ Hamburg, Fachbereich Math, D-20146 Hamburg, Germany 2.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China 3.Univ Vienna, Inst Math, A-1090 Vienna, Austria |
| 推荐引用方式 GB/T 7714 | Gasser, I,Hsiao, L,Markowich, PA,et al. Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors[J]. JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS,2002,268(1):184-199. |
| APA | Gasser, I,Hsiao, L,Markowich, PA,&Wang, S.(2002).Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors.JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS,268(1),184-199. |
| MLA | Gasser, I,et al."Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors".JOURNAL OF MATHEMATICAL ANALYSIS AND APPLICATIONS 268.1(2002):184-199. |
入库方式： OAI收割
来源：数学与系统科学研究院
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