Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors
文献类型:期刊论文
作者 | Gasser, I; Hsiao, L; Li, HL |
刊名 | JOURNAL OF DIFFERENTIAL EQUATIONS
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出版日期 | 2003-08-10 |
卷号 | 192期号:2页码:326-359 |
ISSN号 | 0022-0396 |
DOI | 10.1016/S0022-0396(03)00122-0 |
英文摘要 | The asymptotic behavior of classical solutions of the bipolar hydrodynamical model for semiconductors is considered in the present paper. This system takes the form of Euler-Poisson with electric field and frictional damping added to the momentum equation. The global existence of classical solutions is proven, and the nonlinear diffusive phenomena is observed in large time in the sense that both densities of electron and hole tend to the same unique nonlinear diffusive wave. (C) 2003 Elsevier Science (USA). All rights reserved. |
WOS研究方向 | Mathematics |
语种 | 英语 |
WOS记录号 | WOS:000184362500003 |
出版者 | ACADEMIC PRESS INC ELSEVIER SCIENCE |
源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/18496] ![]() |
专题 | 中国科学院数学与系统科学研究院 |
作者单位 | 1.Univ Vienna, Inst Math, A-1090 Vienna, Austria 2.SISSA, I-34014 Trieste, Italy 3.Univ Hamburg, Fachbereich Math, D-20146 Hamburg, Germany 4.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Gasser, I,Hsiao, L,Li, HL. Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2003,192(2):326-359. |
APA | Gasser, I,Hsiao, L,&Li, HL.(2003).Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors.JOURNAL OF DIFFERENTIAL EQUATIONS,192(2),326-359. |
MLA | Gasser, I,et al."Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors".JOURNAL OF DIFFERENTIAL EQUATIONS 192.2(2003):326-359. |
入库方式: OAI收割
来源:数学与系统科学研究院
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