中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors

文献类型:期刊论文

作者Gasser, I; Hsiao, L; Li, HL
刊名JOURNAL OF DIFFERENTIAL EQUATIONS
出版日期2003-08-10
卷号192期号:2页码:326-359
ISSN号0022-0396
DOI10.1016/S0022-0396(03)00122-0
英文摘要The asymptotic behavior of classical solutions of the bipolar hydrodynamical model for semiconductors is considered in the present paper. This system takes the form of Euler-Poisson with electric field and frictional damping added to the momentum equation. The global existence of classical solutions is proven, and the nonlinear diffusive phenomena is observed in large time in the sense that both densities of electron and hole tend to the same unique nonlinear diffusive wave. (C) 2003 Elsevier Science (USA). All rights reserved.
WOS研究方向Mathematics
语种英语
WOS记录号WOS:000184362500003
出版者ACADEMIC PRESS INC ELSEVIER SCIENCE
源URL[http://ir.amss.ac.cn/handle/2S8OKBNM/18496]  
专题中国科学院数学与系统科学研究院
作者单位1.Univ Vienna, Inst Math, A-1090 Vienna, Austria
2.SISSA, I-34014 Trieste, Italy
3.Univ Hamburg, Fachbereich Math, D-20146 Hamburg, Germany
4.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Gasser, I,Hsiao, L,Li, HL. Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2003,192(2):326-359.
APA Gasser, I,Hsiao, L,&Li, HL.(2003).Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors.JOURNAL OF DIFFERENTIAL EQUATIONS,192(2),326-359.
MLA Gasser, I,et al."Large time behavior of solutions of the bipolar hydrodynamical model for semiconductors".JOURNAL OF DIFFERENTIAL EQUATIONS 192.2(2003):326-359.

入库方式: OAI收割

来源:数学与系统科学研究院

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