Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device
文献类型：期刊论文
| 作者 | Chen, W |
| 刊名 | ACTA MATHEMATICA SCIENTIA
 |
| 出版日期 | 2003-07-01 |
| 卷号 | 23期号:3页码:386-398 |
| 关键词 | semiconductor device strongly A(0)-stable multistep methods finite element methods mixed finite element methods |
| ISSN号 | 0252-9602 |
| 英文摘要 | The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method.. The electron and hole density equations axe treated by implicit-explicit multistep finite element methods. The schemes axe very efficient. The optimal order error estimates both in time and space are derived. |
| 语种 | 英语 |
| WOS记录号 | WOS:000184619900014 |
| 出版者 | KLUWER ACADEMIC PUBL |
| 源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/19043]  |
| 专题 | 中国科学院数学与系统科学研究院 |
| 作者单位 | 1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China 2.Shandong Univ, Sch Econ, Jinan 250100, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, W. Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device[J]. ACTA MATHEMATICA SCIENTIA,2003,23(3):386-398. |
| APA | Chen, W.(2003).Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device.ACTA MATHEMATICA SCIENTIA,23(3),386-398. |
| MLA | Chen, W."Implicit-explicit multistep finite element-mixed finite element methods for the transient behavior of a semiconductor device".ACTA MATHEMATICA SCIENTIA 23.3(2003):386-398. |
入库方式： OAI收割
来源：数学与系统科学研究院
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