中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Global existence and exponential stability of smooth solutions to a full hydrodynamic model to semiconductors

文献类型:期刊论文

作者Hsiao, L; Jiang, S; Zhang, P
刊名MONATSHEFTE FUR MATHEMATIK
出版日期2002-08-01
卷号136期号:4页码:269-285
关键词hydrodynamic semiconductor equations global existence large-time behavior
ISSN号0026-9255
DOI10.1007/s00605-002-0485-0
英文摘要We study a full hydrodynamic semiconductor model in multi-space dimension. The global existence of smooth solutions is established and the exponential stability of the solutions as t-->infinity is investigated.
WOS研究方向Mathematics
语种英语
WOS记录号WOS:000177927000001
出版者SPRINGER WIEN
源URL[http://ir.amss.ac.cn/handle/2S8OKBNM/17366]  
专题数学所
通讯作者Hsiao, L
作者单位1.Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
2.Inst Appl Phys & Computat Math, LCP, Beijing 100088, Peoples R China
推荐引用方式
GB/T 7714
Hsiao, L,Jiang, S,Zhang, P. Global existence and exponential stability of smooth solutions to a full hydrodynamic model to semiconductors[J]. MONATSHEFTE FUR MATHEMATIK,2002,136(4):269-285.
APA Hsiao, L,Jiang, S,&Zhang, P.(2002).Global existence and exponential stability of smooth solutions to a full hydrodynamic model to semiconductors.MONATSHEFTE FUR MATHEMATIK,136(4),269-285.
MLA Hsiao, L,et al."Global existence and exponential stability of smooth solutions to a full hydrodynamic model to semiconductors".MONATSHEFTE FUR MATHEMATIK 136.4(2002):269-285.

入库方式: OAI收割

来源:数学与系统科学研究院

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