中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors

文献类型:期刊论文

作者Hsiao, L; Wang, S
刊名MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES
出版日期2002-06-01
卷号12期号:6页码:777-796
关键词full hydrodynamic model semiconductors asymptotic behavior global smooth solutions
ISSN号0218-2025
英文摘要In this paper, we study the asymptotic behavior of smooth solutions to the initial boundary value problem for the full one-dimensional hydrodynamic model for semiconductors. We prove that the solution to the problem converges to the unique stationary solution time asymptotically exponentially fast.
WOS研究方向Mathematics
语种英语
WOS记录号WOS:000176897300002
出版者WORLD SCIENTIFIC PUBL CO PTE LTD
源URL[http://ir.amss.ac.cn/handle/2S8OKBNM/17639]  
专题数学所
通讯作者Hsiao, L
作者单位Chinese Acad Sci, Acad Math & Syst Sci, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Hsiao, L,Wang, S. Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors[J]. MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,2002,12(6):777-796.
APA Hsiao, L,&Wang, S.(2002).Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors.MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES,12(6),777-796.
MLA Hsiao, L,et al."Asymptotic behavior of global smooth solutions to the full 1D hydrodynamic model for semiconductors".MATHEMATICAL MODELS & METHODS IN APPLIED SCIENCES 12.6(2002):777-796.

入库方式: OAI收割

来源:数学与系统科学研究院

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