中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation

文献类型:期刊论文

作者Ri, Jinmyong; Huang, Feimin
刊名JOURNAL OF DIFFERENTIAL EQUATIONS
出版日期2009-02-15
卷号246期号:4页码:1523-1538
关键词Drift-diffusion model Quasineutral limit Vacuum solution Finite speed of propagation
ISSN号0022-0396
DOI10.1016/j.jde.2008.10.013
英文摘要The first half of this paper is concerning with the nonlinear drift-diffusion semiconductor model in d (d <= 3) dimensional space. The global estimate is achieved on the evolution of support of solution and the finite speed of propagation. The proof is based on the estimate of the weighted norm with special designed weight functions. In the second half, we prove the quasineutral limit locally for 1-dimensional standard drift-diffusion model with discontinuous. sign-changing doping profile. (C) 2008 Elsevier Inc. All rights reserved.
WOS研究方向Mathematics
语种英语
WOS记录号WOS:000263335400010
出版者ACADEMIC PRESS INC ELSEVIER SCIENCE
源URL[http://ir.amss.ac.cn/handle/2S8OKBNM/7886]  
专题应用数学研究所
通讯作者Huang, Feimin
作者单位Chinese Acad Sci, Inst Appl Math, AMSS, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Ri, Jinmyong,Huang, Feimin. Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2009,246(4):1523-1538.
APA Ri, Jinmyong,&Huang, Feimin.(2009).Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation.JOURNAL OF DIFFERENTIAL EQUATIONS,246(4),1523-1538.
MLA Ri, Jinmyong,et al."Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation".JOURNAL OF DIFFERENTIAL EQUATIONS 246.4(2009):1523-1538.

入库方式: OAI收割

来源:数学与系统科学研究院

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