Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation
文献类型:期刊论文
作者 | Ri, Jinmyong; Huang, Feimin![]() |
刊名 | JOURNAL OF DIFFERENTIAL EQUATIONS
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出版日期 | 2009-02-15 |
卷号 | 246期号:4页码:1523-1538 |
关键词 | Drift-diffusion model Quasineutral limit Vacuum solution Finite speed of propagation |
ISSN号 | 0022-0396 |
DOI | 10.1016/j.jde.2008.10.013 |
英文摘要 | The first half of this paper is concerning with the nonlinear drift-diffusion semiconductor model in d (d <= 3) dimensional space. The global estimate is achieved on the evolution of support of solution and the finite speed of propagation. The proof is based on the estimate of the weighted norm with special designed weight functions. In the second half, we prove the quasineutral limit locally for 1-dimensional standard drift-diffusion model with discontinuous. sign-changing doping profile. (C) 2008 Elsevier Inc. All rights reserved. |
WOS研究方向 | Mathematics |
语种 | 英语 |
WOS记录号 | WOS:000263335400010 |
出版者 | ACADEMIC PRESS INC ELSEVIER SCIENCE |
源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/7886] ![]() |
专题 | 应用数学研究所 |
通讯作者 | Huang, Feimin |
作者单位 | Chinese Acad Sci, Inst Appl Math, AMSS, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Ri, Jinmyong,Huang, Feimin. Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2009,246(4):1523-1538. |
APA | Ri, Jinmyong,&Huang, Feimin.(2009).Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation.JOURNAL OF DIFFERENTIAL EQUATIONS,246(4),1523-1538. |
MLA | Ri, Jinmyong,et al."Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation".JOURNAL OF DIFFERENTIAL EQUATIONS 246.4(2009):1523-1538. |
入库方式: OAI收割
来源:数学与系统科学研究院
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