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Weak solutions to isothermal hydrodynamic model for semiconductor devices

文献类型：期刊论文

作者Huang, Feimin2; Li, Tianhong2; Yu, Huimin1,2
刊名JOURNAL OF DIFFERENTIAL EQUATIONS
出版日期2009-12-01
卷号247期号:11页码:3070-3099
关键词Isothermal Euler-Poisson equations Entropy Compensated compactness Semiconductor
ISSN号0022-0396
DOI10.1016/j.jde.2009.07.032
英文摘要In this paper. the Cauchy problem of the isothermal hydrodynamic model for semiconductor devices is investigated. The existence of global weak entropy solutions with large initial data is obtained by using a modified fractional step Lax-Friedrichs scheme and the theory of compensated compactness. As a byproduct, the existence of entropy solutions to the Cauchy problem of the isentropic hydrodynamic model for a semiconductor with infinite mass is also proved. (C) 2009 Elsevier Inc. All rights reserved.
资助项目Outstanding Youth Foundation of NSFC[10825102] ; NSFC-NSAFG[10676037] ; Major State Basic Research Development Program of China[2006CB805902] ; National Natural Science Foundation of China[10701073]
WOS研究方向Mathematics
语种英语
WOS记录号WOS:000271209000008
出版者ACADEMIC PRESS INC ELSEVIER SCIENCE
源URL[http://ir.amss.ac.cn/handle/2S8OKBNM/8855]  
专题应用数学研究所
数学所
通讯作者Yu, Huimin
作者单位1.Shandong Normal Univ, Dept Math, Jinan 250014, Peoples R China
2.Acad Sinica, Acad Math & Syst Sci, Beijing 100091, Peoples R China
推荐引用方式
GB/T 7714		 Huang, Feimin,Li, Tianhong,Yu, Huimin. Weak solutions to isothermal hydrodynamic model for semiconductor devices[J]. JOURNAL OF DIFFERENTIAL EQUATIONS,2009,247(11):3070-3099.
APA Huang, Feimin,Li, Tianhong,&Yu, Huimin.(2009).Weak solutions to isothermal hydrodynamic model for semiconductor devices.JOURNAL OF DIFFERENTIAL EQUATIONS,247(11),3070-3099.
MLA Huang, Feimin,et al."Weak solutions to isothermal hydrodynamic model for semiconductor devices".JOURNAL OF DIFFERENTIAL EQUATIONS 247.11(2009):3070-3099.

入库方式： OAI收割

来源：数学与系统科学研究院

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