A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect
文献类型：期刊论文
| 作者 | Xu, Jingjie1,2; Ma, Zhaocan2; Li, Hongliang3,4; Song, Yu3,4; Zhang, Linbo2,5 ; Lu, Benzhuo2,5
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| 刊名 | IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
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| 出版日期 | 2018-02-01 |
| 卷号 | 31期号:1页码:183-189 |
| 关键词 | Drift-diffusion reaction ELDRS finite element method multi-time-step algorithm TID |
| ISSN号 | 0894-6507 |
| DOI | 10.1109/TSM.2017.2779058 |
| 英文摘要 | In order to study the total ionizing dose degradation and enhanced low dose rate sensitivity effect for semiconductor devices in the space environment, we simulate the drift-diffusion-reaction processes in a 3-dimensional SiO2-Si system. Since the time scale of the drift-diffusion processes is much larger than that of the chemical reaction processes, we use a multi-time-step algorithm to calculate the two types of processes, respectively. In this paper, partial differential equations used to describe the electrodiffusion processes are solved by a finite element method, while the chemical reactions taking place independently in every mesh node are solved as ordinary differential equations. We reproduce qualitative properties of total ionizing dose effect and compare our numerical results with experimental data and other simulation results. This paper paves a way for 3-D simulation of total ionizing dose and enhanced low dose rate sensitivity with high efficiency and robustness. |
| 资助项目 | Science Challenge Program[TZ2016003-1] ; National Key Research and Development Program of Ministry of Science and Technology[2016YFB0201304] ; China NSF[21573274] ; China NSF[11404300] ; China NSF[91430215] ; China NSF[91530323] ; National Center for Mathematics and Interdisciplinary Sciences of Chinese Academy of Sciences |
| WOS研究方向 | Engineering ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000423530700021 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://ir.amss.ac.cn/handle/2S8OKBNM/29426]  |
| 专题 | 计算数学与科学工程计算研究所 |
| 通讯作者 | Song, Yu; Lu, Benzhuo |
| 作者单位 | 1.Univ Sci & Technol China, Sch Math Sci, Hefei 230026, Anhui, Peoples R China 2.Chinese Acad Sci, Acad Math & Syst Sci, State Key Lab Sci & Engn Comp, Beijing 100190, Peoples R China 3.China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610000, Sichuan, Peoples R China 4.China Acad Engn Phys, Inst Elect Engn, Mianyang 621900, Peoples R China 5.Univ Chinese Acad Sci, Sch Math Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Jingjie,Ma, Zhaocan,Li, Hongliang,et al. A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect[J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,2018,31(1):183-189. |
| APA | Xu, Jingjie,Ma, Zhaocan,Li, Hongliang,Song, Yu,Zhang, Linbo,&Lu, Benzhuo.(2018).A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect.IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING,31(1),183-189. |
| MLA | Xu, Jingjie,et al."A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect".IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 31.1(2018):183-189. |
入库方式： OAI收割
来源：数学与系统科学研究院
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