Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory
文献类型：期刊论文
| 作者 | Zhou,Guangdong; Xiao,Lihua; Zhang,Shuangju; Wu,Bo; Liu,Xiaoqin; Zhou,Ankun |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2017 |
| 卷号 | 722页码:753-759 |
| 关键词 | Electric-field Devices Bipolar Films Heterostructures Transition Behaviors Filament Matrix Cells Bilay Niox/tio2 Films Resistive Switching Memory Migration Of Oxygen Vacancy Ag Conduction Filamens |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2017.06.178 |
| 英文摘要 | Bilayer of NiOx/TiO2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS) behavior, which with appropriate resistance ratio of similar to 10(3), switching cycle endurance for 10(2) and long retention time for 10(4) s, is observed in the bilayer NiOx/TiO2 based device. Construction of contact-potential barrier, formation and rupture of a localized conduction filaments and migration of oxygen vacancy existed in the interface near electrodes co-contribute to the enhanced RS memory effects, but the migration of Ag+, Ni2x+ and diffusion of oxygen vacancies are the dominated ones. This work might give an insight into the mechanism of RS memory behaviors of an oxide-stacked structure device. (C) 2017 Published by Elsevier B.V. |
| 学科主题 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| 源URL | [http://ir.kib.ac.cn/handle/151853/54868]  |
| 专题 | 昆明植物研究所_植物化学与西部植物资源持续利用国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhou,Guangdong,Xiao,Lihua,Zhang,Shuangju,et al. Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,722:753-759. |
| APA | Zhou,Guangdong,Xiao,Lihua,Zhang,Shuangju,Wu,Bo,Liu,Xiaoqin,&Zhou,Ankun.(2017).Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory.JOURNAL OF ALLOYS AND COMPOUNDS,722,753-759. |
| MLA | Zhou,Guangdong,et al."Mechanism for an enhanced resistive switching effect of bilayer NiOx/TiO2 for resistive random access memory".JOURNAL OF ALLOYS AND COMPOUNDS 722(2017):753-759. |
入库方式： OAI收割
来源：昆明植物研究所
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