Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation
文献类型：期刊论文
| 作者 | Zheng, QW (Zheng Qi-Wen)1; Cui, JW (Cui Jiang-Wei)1; Zhou, H (Zhou Hang)1; Yu, DZ (Yu De-Zhao)1; Yu, XF (Yu Xue-Feng)1 ; Lu, W (Lu Wu)1; Guo, Q (Guo Qi)1; Ren, DY (Ren Di-Yuan)1
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| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2015 |
| 卷号 | 24期号:10 |
| 关键词 | Total Dose Irradiation Static Random Access Memory Functional Failure Mode |
| DOI | 10.1088/1674-1056/24/10/106106 |
| 英文摘要 | Functional failure mode of commercial deep sub-micron static random access memory (SRAM) induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result. |
| WOS记录号 | WOS:000363327400060 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/4910]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, QW ,Cui, JW ,Zhou, H ,et al. Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation[J]. CHINESE PHYSICS B,2015,24(10). |
| APA | Zheng, QW .,Cui, JW .,Zhou, H .,Yu, DZ .,Yu, XF .,...&Ren, DY .(2015).Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation.CHINESE PHYSICS B,24(10). |
| MLA | Zheng, QW ,et al."Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation".CHINESE PHYSICS B 24.10(2015). |
入库方式： OAI收割
来源：新疆理化技术研究所
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