Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE
文献类型:期刊论文
作者 | Dai, P (Dai, Pan); Ji, L (Ji, Lian); Tan, M (Tan, Ming); Uchida, S (Uchida, Shiro); Wu, YY (Wu, Yuanyuan); Abuduwayiti, A (Abuduwayiti, Aierken)[ 3 ]; Heini, M (Heini, Maliya); Guo, Q (Guo, Qi)![]() |
刊名 | SOLAR ENERGY MATERIALS AND SOLAR CELLS
![]() |
出版日期 | 2017 |
卷号 | 171期号:11页码:118-122 |
关键词 | Electron Irradiation Four-junction Solar Cell Molecular Beam Epitaxy |
ISSN号 | 0927-0248 |
DOI | 10.1016/j.solmat.2017.06.046 |
英文摘要 | For application in space environments, the effect of 1-MeV electron irradiation on wafer-bonded GaInP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all solid state molecular beam epitaxy was studied. After exposure to 1-MeV electron irradiation at 1 x 15 e/cm(2), an end of life remaining factor of approximately 85% was obtained. The wafer bonding interface was studied by spectral response and transmission electron microscopy. 1-MeV electron irradiation was conducted on the individual InGaAsP and InGaAs single junction cell, respectively. The degradation of the four -junction cell was mainly due to damage on the InGaAsP and InGaAs subcells rather than the bonding interface. |
WOS记录号 | WOS:000408298300014 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/5028] ![]() |
专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
作者单位 | 1.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou Ind Pk,Ruoshui Rd 398, Suzhou, Peoples R China 2.Chiba Inst Technol, Dept Mech Sci & Engn, Fac Engn, 2-17-1 Tsudanuma, Narashino, Chiba 2750016, Japan 3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Space Environm, Urumqi 830011, Peoples R China |
推荐引用方式 GB/T 7714 | Dai, P ,Ji, L ,Tan, M ,et al. Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2017,171(11):118-122. |
APA | Dai, P .,Ji, L .,Tan, M .,Uchida, S .,Wu, YY .,...&Yang, H .(2017).Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE.SOLAR ENERGY MATERIALS AND SOLAR CELLS,171(11),118-122. |
MLA | Dai, P ,et al."Electron irradiation study of room-temperature wafer-bonded four junction solar cell grown by MBE".SOLAR ENERGY MATERIALS AND SOLAR CELLS 171.11(2017):118-122. |
入库方式: OAI收割
来源:新疆理化技术研究所
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。