Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor
文献类型：期刊论文
| 作者 | Zhang, JX (Zhang, Jinxin); Guo, HX (Guo, Hongxia); Zhang, FQ (Zhang, Fengqi); He, CH (He, Chaohui); Li, P (Li, Pei); Yan, YY (Yan, Yunyi); Wang, H (Wang, Hui); Zhang, LX (Zhang, Linxia) |
| 刊名 | Science China-Information Sciences
 |
| 出版日期 | 2017 |
| 卷号 | 60期号:12页码:1-3 |
| ISSN号 | 1674-733X |
| DOI | 10.1007/s11432-017-9249-6 |
| WOS记录号 | WOS:000419034600014 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/5119]  |
| 专题 | 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | 1.Xidian Univ, Sch Aerosp Sci & Technol, Xian 710126, Shaanxi, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China 3.Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China 4.Northwest Inst Nucl Technol, Xian 710024, Shaanxi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, JX ,Guo, HX ,Zhang, FQ ,et al. Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor[J]. Science China-Information Sciences,2017,60(12):1-3. |
| APA | Zhang, JX .,Guo, HX .,Zhang, FQ .,He, CH .,Li, P .,...&Zhang, LX .(2017).Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor.Science China-Information Sciences,60(12),1-3. |
| MLA | Zhang, JX ,et al."Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor".Science China-Information Sciences 60.12(2017):1-3. |
入库方式： OAI收割
来源：新疆理化技术研究所
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