Recently, the discovery of organometallic halide perovskites provides promising routes for fabricating optoelectronic devices with low cost and high performance. Previous experimental studies of MAPbI(3) optoelectronic devices, such as photodetectors and solar cells, are normally based on polycrystalline films. In this work, a high-performance planar-type photodetector fabricated on the (100) facet of a MAPbI(3) single crystal is proposed. We demonstrate that MAPbI(3) photodetector based on single crystal can perform much better than that on polycrystalline-film counterpart. The low trap density of MAPbI(3) single crystal accounts for the higher carrier mobility and longer carrier diffusion length, resulted in a significant performance increasement of MAPbI(3) photodetector. Compared with similar planar-type photodetectors based on MAPbI(3) polycrystalline film, our MAPbI(3) single crystal photodetector showed excellent performance with good stability and durability, broader response spectrum to near-infrared region, about 10(2) times higher responsivity and EQE, and approximately 10(3) times faster response speed. These results may pave the way for exploiting high-performance perovskites photodetectors based on single crystal.