Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors
文献类型：期刊论文
| 作者 | Li, P (Li Pei); Guo, HX (Guo Hong-Xia); Guo, Q (Guo Qi) ; Zhang, JX (Zhang Jin-Xin); Wei, Y (Wei Ying)
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| 刊名 | CHINESE PHYSICS LETTERS
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| 出版日期 | 2015 |
| 卷号 | 32期号:8 |
| DOI | 10.1088/0256-307X/32/8/088505 |
| 英文摘要 | We present a study on the single event transient (SET) induced by a pulsed laser in different silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with the structure of local oxidation of silicon (LOCOS) and deep trench isolation (DTI). The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the collector-substrate (C/S) junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes. |
| WOS记录号 | WOS:000359265600050 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/5149]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
| 作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Key Lab Funct Mat & Devices Special Environm CAS, Urumqi 830011, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Northwest Inst Nucl Technol, Xian 710024, Peoples R China 4.Xi An Jiao Tong Univ, Sch Nucl Sci & Tecnol, Xian 710049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, P ,Guo, HX ,Guo, Q ,et al. Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors[J]. CHINESE PHYSICS LETTERS,2015,32(8). |
| APA | Li, P ,Guo, HX ,Guo, Q ,Zhang, JX ,&Wei, Y .(2015).Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors.CHINESE PHYSICS LETTERS,32(8). |
| MLA | Li, P ,et al."Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors".CHINESE PHYSICS LETTERS 32.8(2015). |
入库方式： OAI收割
来源：新疆理化技术研究所
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