Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor
文献类型：期刊论文
| 作者 | Wang, X (Wang Xin); Lu, W (Lu Wu); Wu, X (Wu Xue); Ma, WY (Ma Wu-Ying); Cui, JW (Cui Jiang-Wei); Liu, MH (Liu Mo-Han); Jiang, K (Jiang Ke) |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2014 |
| 卷号 | 63期号:22 |
| 关键词 | Total Dose Radiation Nmosfet Parasitic Transistor Bandgap Voltage Reference |
| DOI | 10.7498/aps.63.226101 |
| WOS记录号 | WOS:000346853600035 |
| 源URL | [http://ir.xjipc.cas.cn/handle/365002/5196]  |
| 专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 |
| 作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, X ,Lu, W ,Wu, X ,et al. Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor[J]. ACTA PHYSICA SINICA,2014,63(22). |
| APA | Wang, X .,Lu, W .,Wu, X .,Ma, WY .,Cui, JW .,...&Jiang, K .(2014).Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor.ACTA PHYSICA SINICA,63(22). |
| MLA | Wang, X ,et al."Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor".ACTA PHYSICA SINICA 63.22(2014). |
入库方式： OAI收割
来源：新疆理化技术研究所
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