中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 新疆理化技术研究所
  3. 中国科学院新疆理化技术研究所
  4. 中国科学院特殊环境功能材料与器件重点试验室
Total ionizing dose and synergistic effects of magnetoresistive random-access memory

文献类型：期刊论文

作者Zhang, XY (Zhang, Xing-Yao); Guo, Q (Guo, Qi); Li, YD (Li, Yu-Dong); Wen, L (Wen, Lin); Zhang, XY
刊名NUCLEAR SCIENCE AND TECHNIQUES
出版日期2018
卷号29期号:8页码:1-5
关键词Magnetoresistive Random-access Memory Total Ionizing Dose Synergistic Effect
ISSN号1001-8042
DOI10.1007/s41365-018-0451-8
英文摘要

A magnetoresistive random-access memory (MRAM) device was irradiated by Co-60 gamma-rays and an electron beam. The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation, from which the total ionizing dose (TID) and the synergistic damage mechanism of MRAM were analyzed. In addition, DC, AC, and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system. The radiation-sensitive parameters were obtained through analyzing the data. Because of the magnetic field applied on the MRAM while testing the synergistic effects, shallow trench isolation leakage and Frenkel-Poole emission due to synergistic effects were smaller than that of TID, and hence radiation damage of the synergistic effects was also lower.

WOS记录号WOS:000437273100005
源URL[http://ir.xjipc.cas.cn/handle/365002/5517]  
专题新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
新疆理化技术研究所_材料物理与化学研究室
通讯作者Zhang, XY
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China
2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China
推荐引用方式
GB/T 7714		 Zhang, XY ,Guo, Q ,Li, YD ,et al. Total ionizing dose and synergistic effects of magnetoresistive random-access memory[J]. NUCLEAR SCIENCE AND TECHNIQUES,2018,29(8):1-5.
APA Zhang, XY ,Guo, Q ,Li, YD ,Wen, L ,&Zhang, XY.(2018).Total ionizing dose and synergistic effects of magnetoresistive random-access memory.NUCLEAR SCIENCE AND TECHNIQUES,29(8),1-5.
MLA Zhang, XY ,et al."Total ionizing dose and synergistic effects of magnetoresistive random-access memory".NUCLEAR SCIENCE AND TECHNIQUES 29.8(2018):1-5.

入库方式： OAI收割

来源：新疆理化技术研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。