In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS2-MoSe2 Lateral Heterostructures and Photodetector Application
文献类型：期刊论文
| 作者 | Chen, Xiaoshuang1,2; Qiu, Yunfeng1; Yang, Huihui1; Liu, Guangbo1; Zheng, Wei1; Feng, Wei1; Cao, Wenwu3; Hu, Wenping2,4; Hu, PingAn1 |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2017-01-18 |
| 卷号 | 9期号:2页码:1684-1691 |
| 关键词 | Mosaic Lateral Heterostructure Mos2/mose2 2d Material Photodetector |
| 英文摘要 | Considering the unique layered structure and novel optoelectronic properties of individual MoS2 and MoSe2, as well as the quantum coherence or donor-acceptor coupling effects between these two components, rational design and artificial growth of in-plane mosaic MoS2/MoSe2 lateral heterojunctions film on conventional amorphous SiO2/Si substrate are in high demand. In this article, large-area, uniform, high-quality mosaic MoS2/MoSe2 lateral heterojunctions film was successfully grown on SiO2/Si substrate for the first time by chemical vapor deposition (CVD) technique. MoSe2 film was grown along MoS2 triangle edges and occupied the blanks of the substrate, finally leading to the formation of mosaic MoS2/MoSe2 lateral heterojunctions film. The composition and microstructure of mosaic MoS2/MoSe2 lateral heterojunctions film were characterized by various analytic techniques. Photodetectors based on mosaic MoS2/MoSe2 lateral heterojunctions film, triangular MoS2 monolayer, and multilayer MoSe2 film are systematically investigated. The mosaic MoS2/MoSe2 lateral heterojunctions film photodetector exhibited optimal photoresponse performance, giving rise to responsivity, detectivity, and external quantum efficiency (EQE) up to 1.3 A W-1, 2.6 x 10(11) Jones, and 263.1%, respectively, under the bias voltage of 5 V with 0.29 mW cm(-2) (610 nm), possibly due to the matched band alignment of MoS2 and MoSe2 and strong donor-acceptor delocalization effect between them. Taking into account the similar edge conditions of transition metal dichalcogenides (TMDCs), such a facile and reliable approach might open up a unique route for preparing other 2D mosaic lateral heterojunctions films in a manipulative manner. Furthermore, the mosaic lateral heterojunctions film like MoS2/MoSe2 in the present work will be a promising candidate for optoelectronic fields. |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/37950]  |
| 专题 | 化学研究所_有机固体实验室 |
| 作者单位 | 1.Harbin Inst Technol, Minist Educ, Key Lab Microsyst & Microstruct, Harbin 150080, Peoples R China 2.Harbin Inst Technol, Dept Phys, Harbin 150080, Peoples R China 3.Harbin Inst Technol, Condensed Matter Sci & Technol Inst, Harbin 150080, Peoples R China 4.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Xiaoshuang,Qiu, Yunfeng,Yang, Huihui,et al. In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS2-MoSe2 Lateral Heterostructures and Photodetector Application[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(2):1684-1691. |
| APA | Chen, Xiaoshuang.,Qiu, Yunfeng.,Yang, Huihui.,Liu, Guangbo.,Zheng, Wei.,...&Hu, PingAn.(2017).In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS2-MoSe2 Lateral Heterostructures and Photodetector Application.ACS APPLIED MATERIALS & INTERFACES,9(2),1684-1691. |
| MLA | Chen, Xiaoshuang,et al."In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS2-MoSe2 Lateral Heterostructures and Photodetector Application".ACS APPLIED MATERIALS & INTERFACES 9.2(2017):1684-1691. |
入库方式： OAI收割
来源：化学研究所
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