Alloying Strategy in Cu-In-Ga-Se Quantum Dots for High Efficiency Quantum Dot Sensitized Solar Cells
文献类型：期刊论文
| 作者 | Peng, Wenxiang1; Du, Jun1; Pan, Zhenxiao1; Nakazawa, Naoki2; Sun, Jiankun4; Du, Zhonglin1; Shen, Gencai1; Yu, Juan1; Hu, Jin-Song4; Shen, Qing2,3 |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2017-02-15 |
| 卷号 | 9期号:6页码:5328-5336 |
| 关键词 | Photovoltaic Cells Quantum Dot Sensitized Solar Cells Cu-in-ga-se (Cigse) Qds Alloying Strategy High Efficiency |
| 英文摘要 | I-III-VI2 group "green" quantum dots (QDs) are attracting increasing attention in photoelectronic conversion applications. Herein, on the basis of the "simultaneous nucleation and growth" approach, Cu-In-Ga-Se (CIGSe) QDs with light harvesting range of about 1000 nm were synthesized and used as sensitizer to construct quantum dot sensitized solar cells (QDSCs). Inductively coupled plasma atomic emission spectrometry (ICP-AES), wild-angle X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analyses demonstrate that the Ga element was alloyed in the Cu-In-Se (CISe) host. Ultraviolet photoelectron spectroscopy (UPS) and femtosecond (fs) resolution transient absorption (TA) measurement results indicate that the alloying strategy could optimize the electronic structure in the obtained CIGSe QD material, thus matching well with TiO2 substrate and favoring the photogenerated electron extraction. Open circuit voltage decay (OCVD) and impedance spectroscopy (IS) tests indicate that the intrinsic recombination in CIGSe QDSCs was well suppressed relative to that in CISe QDSCs. As a result, CIGSe based QDSCs with use of titanium mesh supported mesoporous carbon counter electrode exhibited a champion efficiency of 11.49% (J(sc) = 25.01 mA/cm(2), V-oc = 0.740 V, FF = 0.621) under the irradiation of full one sun in comparison with 9.46% for CISe QDSCs. |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/38226]  |
| 专题 | 化学研究所_分子纳米结构与纳米技术实验室 |
| 作者单位 | 1.East China Univ Sci & Technol, Sch Chem & Mol Engn, Key Lab Adv Mat, Shanghai 200237, Peoples R China 2.Univ Electrocommun, Dept Engn Sci, Tokyo 1828585, Japan 3.Japan Sci & Technol Agcy JST, Saitama 3320012, Japan 4.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Key Lab Mol Nanostruct & Nanotechnol, Beijing 100190, Peoples R China 5.South China Agr Univ, Coll Mat & Energy, 483 Wushan Rd, Guangzhou 510642, Guangdong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Peng, Wenxiang,Du, Jun,Pan, Zhenxiao,et al. Alloying Strategy in Cu-In-Ga-Se Quantum Dots for High Efficiency Quantum Dot Sensitized Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(6):5328-5336. |
| APA | Peng, Wenxiang.,Du, Jun.,Pan, Zhenxiao.,Nakazawa, Naoki.,Sun, Jiankun.,...&Zhong, Xinhua.(2017).Alloying Strategy in Cu-In-Ga-Se Quantum Dots for High Efficiency Quantum Dot Sensitized Solar Cells.ACS APPLIED MATERIALS & INTERFACES,9(6),5328-5336. |
| MLA | Peng, Wenxiang,et al."Alloying Strategy in Cu-In-Ga-Se Quantum Dots for High Efficiency Quantum Dot Sensitized Solar Cells".ACS APPLIED MATERIALS & INTERFACES 9.6(2017):5328-5336. |
入库方式： OAI收割
来源：化学研究所
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