Inorganic Ligand Thiosulfate-Capped Quantum Dots for Efficient Quantum Dot Sensitized Solar Cells
文献类型：期刊论文
| 作者 | Ren, Zhenwei1,2; Yu, Juan1; Pan, Zhenxiao2; Wang, Jizheng3; Zhong, Xinhua1,2 |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2017-06-07 |
| 卷号 | 9期号:22页码:18936-18944 |
| 关键词 | Photovoltaics Quantum Dot Sensitized Solar Cells Inorganic Ligand Thiosulfate High Loading Electron Injection Rate |
| 英文摘要 | The insulating nature of organic ligands containing long hydrocarbon tails brings forward serious limitations for presynthesized quantum dots (QDs) in photovoltaic applications. Replacing the initial organic hydrocarbon chain ligands with simple, cheap, and small inorganic ligands is regarded as an efficient strategy for improving the performance of the resulting photovoltaic devices. Herein, thiosulfate (S2O32-) and sulfide (S2-) were employed as ligand-exchange reagents to get access to the inorganic ligand S2O32-and S-2-capped CdSe QDs. The obtained inorganic ligand-capped QDs, together with the initial oleylamine-capped QDs, were used as light-absorbing materials in the construction of quantum dot sensitized solar cells (QDSCs). Photovoltaic results indicate that thiosulfate-capped QDs give excellent power conversion efficiency (PCE) of 6.11% under the illumination of full one sun; which is remarkably higher than those of sulfide-(3.36%) and OAm-capped QDs (0.84%) and is comparable to the state-of:the-art,:value based on mercaptocatboxylit acid capped QDs. Photoluminescence (PL) decay characterization demonstrates that thiosulfate-based QDSCs have a much-faster electron injection rate from,QD to TiO2 substrate in comparison with those of sulfide-and OAm-based QDSCs. Electrochemical impedance spectroscopy (EIS) results indicate that higher charge-recombination resistance between potoanode and eletrolyte interfaces were observed in the thiosulfate-based cells. To the best of our knowledge, this is the first application of thiosulfate-Capped QDs in the fabrication of efficient QDSCs. This will lend a new perspective to boosting the performance of QDSCs furthermore. |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/38530]  |
| 专题 | 化学研究所_有机固体实验室 |
| 作者单位 | 1.East China Univ Sci & Technol, Sch Chem & Mol Engn, Key Lab Adv Mat, Shanghai 200237, Peoples R China 2.South China Agr Univ, Coll Mat & Energy, 483 Wushan Rd, Guangzhou 510642, Guangdong, Peoples R China 3.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ren, Zhenwei,Yu, Juan,Pan, Zhenxiao,et al. Inorganic Ligand Thiosulfate-Capped Quantum Dots for Efficient Quantum Dot Sensitized Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2017,9(22):18936-18944. |
| APA | Ren, Zhenwei,Yu, Juan,Pan, Zhenxiao,Wang, Jizheng,&Zhong, Xinhua.(2017).Inorganic Ligand Thiosulfate-Capped Quantum Dots for Efficient Quantum Dot Sensitized Solar Cells.ACS APPLIED MATERIALS & INTERFACES,9(22),18936-18944. |
| MLA | Ren, Zhenwei,et al."Inorganic Ligand Thiosulfate-Capped Quantum Dots for Efficient Quantum Dot Sensitized Solar Cells".ACS APPLIED MATERIALS & INTERFACES 9.22(2017):18936-18944. |
入库方式： OAI收割
来源：化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。