Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures
文献类型：期刊论文
| 作者 | Liu, Mengxi1,2; Shi, Jianping1,3; Li, Yuanchang2; Zhou, Xiebo1,3; Ma, Donglin1; Qi, Yue1; Zhang, Yanfeng1,3; Liu, Zhongfan1 |
| 刊名 | SMALL
 |
| 出版日期 | 2017-10-25 |
| 卷号 | 13期号:40 |
| 英文摘要 | The existence of defects in 2D semiconductors has been predicted to generate unique physical properties and markedly influence their electronic and optoelectronic properties. In this work, it is found that the monolayer MoS2 prepared by chemical vapor deposition is nearly defect-free after annealing under ultrahigh vacuum conditions at approximate to 400 K, as evidenced by scanning tunneling microscopy observations. However, after thermal annealing process at approximate to 900 K, the existence of dominant single sulfur vacancies and relatively rare vacancy chains (2S, 3S, and 4S) is convinced in monolayer MoS2 as-grown on Au foils. Of particular significance is the revelation that the versatile vacancies can modulate the band structure of the monolayer MoS2, leading to a decrease of the bandgap and an obvious n-doping effect. These results are confirmed by scanning tunneling spectroscopy data as well as first-principles theoretical simulations of the related morphologies and the electronic properties of the various defect types. Briefly, this work should pave a novel route for defect engineering and hence the electronic property modulation of three-atom-thin 2D layered semiconductors. |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/39127]  |
| 专题 | 化学研究所_分子纳米结构与纳米技术实验室 |
| 作者单位 | 1.Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Ctr Nanochem CNC,Beijing Sci & Engn Ctr Nanocarbo, Beijing 100871, Peoples R China 2.Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China 3.Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Mengxi,Shi, Jianping,Li, Yuanchang,et al. Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures[J]. SMALL,2017,13(40). |
| APA | Liu, Mengxi.,Shi, Jianping.,Li, Yuanchang.,Zhou, Xiebo.,Ma, Donglin.,...&Liu, Zhongfan.(2017).Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures.SMALL,13(40). |
| MLA | Liu, Mengxi,et al."Temperature-Triggered Sulfur Vacancy Evolution in Monolayer MoS2/Graphene Heterostructures".SMALL 13.40(2017). |
入库方式： OAI收割
来源：化学研究所
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