Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem
文献类型：期刊论文
| 作者 | Zhao, Qiang1,2; Wang, Hanlin1,2; Ni, Zhenjie1; Liu, Jie3; Zhen, Yonggang1; Zhang, Xiaotao3; Jiang, Lang1; Li, Rongjin3; Dong, Huanli1; Hu, Wenping1,3 |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2017-09-13 |
| 卷号 | 29期号:34 |
| 关键词 | Ferroelectrics Memory Devices Organic Electronics Organic Field-effect Transistors |
| 英文摘要 | Organic electronics based on poly(vinylidenefluoride/trifluoroethylene) (P(VDF-TrFE)) dielectric is facing great challenges in flexible circuits. As one indispensable part of integrated circuits, there is an urgent demand for low-cost and easy-fabrication nonvolatile memory devices. A breakthrough is made on a novel ferroelectric random access memory cell (1T1T FeRAM cell) consisting of one selection transistor and one ferroelectric memory transistor in order to overcome the half-selection problem. Unlike complicated manufacturing using multiple dielectrics, this system simplifies 1T1T FeRAM cell fabrication using one common dielectric. To achieve this goal, a strategy for semiconductor/insulator (S/I) interface modulation is put forward and applied to nonhysteretic selection transistors with high performances for driving or addressing purposes. As a result, high hole mobility of 3.81 cm(2) V-1 s(-1) (average) for 2,6-diphenylanthracene (DPA) and electron mobility of 0.124 cm(2) V-1 s(-1) (average) for N,N-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDI-FCN2) are obtained in selection transistors. In this work, we demonstrate this technology's potential for organic ferroelectric-based pixelated memory module fabrication. |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/39308]  |
| 专题 | 化学研究所_有机固体实验室 |
| 作者单位 | 1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Sch Chem & Chem Engn, Beijing 100049, Peoples R China 3.Tianjin Univ, Collaborat Innovat Ctr Chem Sci & Engn, Dept Chem, Tianjin Key Lab Mol Optoelect Sci,Sch Sci, Tianjin 300072, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Qiang,Wang, Hanlin,Ni, Zhenjie,et al. Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem[J]. ADVANCED MATERIALS,2017,29(34). |
| APA | Zhao, Qiang.,Wang, Hanlin.,Ni, Zhenjie.,Liu, Jie.,Zhen, Yonggang.,...&Hu, Wenping.(2017).Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem.ADVANCED MATERIALS,29(34). |
| MLA | Zhao, Qiang,et al."Organic Ferroelectric-Based 1T1T Random Access Memory Cell Employing a Common Dielectric Layer Overcoming the Half-Selection Problem".ADVANCED MATERIALS 29.34(2017). |
入库方式： OAI收割
来源：化学研究所
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