Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors
文献类型：期刊论文
| 作者 | Fu, Lei1,2; Wang, Feng3; Wu, Bin1; Wu, Nian2; Huang, Wei4; Wang, Hanlin1; Jin, Chuanhong4; Zhuang, Lin2; He, Jun3; Fu, Lei2 |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2017-08-25 |
| 卷号 | 29期号:32 |
| 关键词 | Hafnium Disulfide Crystals Near-infrared Transition Metal Dichalcogenides Ultrasensitive Phototransistors Van Der Waals Epitaxy |
| 英文摘要 | As a member of the group IVB transition metal dichalcogenides (TMDs) family, hafnium disulfide (HfS2) is recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high-quality HfS2 crystals, sparsely reported, has greatly hindered the development of this new field. Here, a facile strategy for controlled synthesis of high-quality atomic layered HfS2 crystals by van der Waals epitaxy is reported. Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S-edge and Hf-edge. Impressively, the HfS2 back-gate field-effect transistors display a competitive mobility of 7.6 cm(2) V-1 s(-1) and an ultrahigh on/off ratio exceeding 10(8). Meanwhile, ultrasensitive near-infrared phototransistors based on the HfS2 crystals (indirect bandgap approximate to 1.45 eV) exhibit an ultrahigh responsivity exceeding 3.08 x 10(5) A W-1, which is 10(9)-fold higher than 9 x 10(-5) A W-1 obtained from the multilayer MoS2 in near-infrared photo-detection. Moreover, an ultrahigh photogain exceeding 4.72 x 10(5) and an ultrahigh detectivity exceeding 4.01 x 10(12) Jones, superior to the vast majority of the reported 2D-materials-based phototransistors, imply a great promise in TMD-based 2D electronic and optoelectronic applications. |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/41062]  |
| 专题 | 化学研究所_有机固体实验室 |
| 作者单位 | 1.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Wuhan Univ, Coll Chem & Mol Sci, Wuhan 430072, Hubei, Peoples R China 3.Natl Ctr Nanoscience & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China 4.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fu, Lei,Wang, Feng,Wu, Bin,et al. Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors[J]. ADVANCED MATERIALS,2017,29(32). |
| APA | Fu, Lei.,Wang, Feng.,Wu, Bin.,Wu, Nian.,Huang, Wei.,...&Liu, Yunqi.(2017).Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors.ADVANCED MATERIALS,29(32). |
| MLA | Fu, Lei,et al."Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors".ADVANCED MATERIALS 29.32(2017). |
入库方式： OAI收割
来源：化学研究所
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