Buried homojunction in CdS/Sb2Se3 thin film photovoltaics generated by interfacial diffusion
文献类型：期刊论文
| 作者 | Zhou, Ying1,2,3; Li, Yang1,2,3; Luo, Jiajun1,2,3; Li, Dengbing1,2,3; Liu, Xinsheng4; Chen, Chao1,2,3; Song, Huaibing1,2,3; Ma, Jingyuan5; Xue, Ding-Jiang5; Yang, Bo1,2,3 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2017-07-03 |
| 卷号 | 111期号:1 |
| 英文摘要 | Antimony selenide (Sb2Se3) emerges as a very promising non-toxic absorber material for thin film photovoltaics, and most of the devices, either in the superstrate or substrate configuration, employed CdS as the buffer layer. Due to the peculiar one-dimensional crystal structure of Sb2Se3, severe interfacial diffusion would be expected. In this letter, the interfacial diffusion in CdS/Sb2Se3 photovoltaics was carefully characterized from a combined material and device physics characterization. The results indicated that a buried homojunction located deep inside the Sb2Se3 absorber layer due to Cd diffusion, instead of the apparent CdS/Sb2Se3 heterojunction, dictated charge separation and device performance in Sb2Se3 thin film solar cells. Cd diffusion converted p-type Sb2Se3 into n-type by introducing a donor level with an activation energy of 0.22 eV. Our studies deepen the understanding of Sb2Se3 photovoltaics and shed light on their further performance optimization. Published by AIP Publishing. |
| 语种 | 英语 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/38999]  |
| 专题 | 化学研究所_其它 |
| 作者单位 | 1.Huazhong Univ Sci & Technol HUST, Wuhan Natl Lab Optoelect WNLO, Wuhan 430074, Peoples R China 2.Huazhong Univ Sci & Technol HUST, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China 3.Huazhong Univ Sci & Technol, Shenzhen R&D Ctr, Shenzhen 518000, Peoples R China 4.Henan Univ, Collaborat Innovat Ctr Nano Funct Mat & Applicat, Minist Educ, Key Lab Special Funct Mat, Kaifeng 475004, Henan Province, Peoples R China 5.Chinese Acad Sci, Beijing Inst Chem, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Ying,Li, Yang,Luo, Jiajun,et al. Buried homojunction in CdS/Sb2Se3 thin film photovoltaics generated by interfacial diffusion[J]. APPLIED PHYSICS LETTERS,2017,111(1). |
| APA | Zhou, Ying.,Li, Yang.,Luo, Jiajun.,Li, Dengbing.,Liu, Xinsheng.,...&Tang, Jiang.(2017).Buried homojunction in CdS/Sb2Se3 thin film photovoltaics generated by interfacial diffusion.APPLIED PHYSICS LETTERS,111(1). |
| MLA | Zhou, Ying,et al."Buried homojunction in CdS/Sb2Se3 thin film photovoltaics generated by interfacial diffusion".APPLIED PHYSICS LETTERS 111.1(2017). |
入库方式： OAI收割
来源：化学研究所
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