A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application
文献类型:期刊论文
作者 | Cheng, GD; Zhang, YG; Yan, L; Huang, HF; Huang, Q; Song, YX; Chen, Y; Tang, Z |
刊名 | COMPUTATIONAL MATERIALS SCIENCE
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出版日期 | 2017 |
卷号 | 129页码:247-251 |
关键词 | Qubit Defect First-principle Calculations Spin Coherence Time |
ISSN号 | 0927-0256 |
DOI | 10.1016/j.commatsci.2016.12.032 |
文献子类 | 期刊论文 |
英文摘要 | First-principles calculations in combination with group theory analyses were employed to study the spin polarized electronic structures of CBVN centers consisting of a nitrogen vacancy and a substitutional carbon atom in hexagonal boron nitride (h-BN) monolayer with different charge states. It is clarified that the paramagnetic neutral CBVN center is stable in the n-type h-BN monolayer. The neutral defect center possesses a triplet (S = 1) ground state and with two spin-conserved optical vertical transition. Its spin coherence time is estimated to be 3.9 ms at T = 0 K by a simple scheme combining the mean-field theory and the first-principles calculations. The results indicate that the neutral CBVN center is very suitable for achieving spin qubit. (C) 2017 Elsevier B.V. All rights reserved. |
语种 | 英语 |
WOS记录号 | WOS:000394065000030 |
源URL | [http://ir.sinap.ac.cn/handle/331007/27245] ![]() |
专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
推荐引用方式 GB/T 7714 | Cheng, GD,Zhang, YG,Yan, L,et al. A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application[J]. COMPUTATIONAL MATERIALS SCIENCE,2017,129:247-251. |
APA | Cheng, GD.,Zhang, YG.,Yan, L.,Huang, HF.,Huang, Q.,...&Tang, Z.(2017).A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application.COMPUTATIONAL MATERIALS SCIENCE,129,247-251. |
MLA | Cheng, GD,et al."A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application".COMPUTATIONAL MATERIALS SCIENCE 129(2017):247-251. |
入库方式: OAI收割
来源:上海应用物理研究所
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