中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application

文献类型:期刊论文

作者Cheng, GD; Zhang, YG; Yan, L; Huang, HF; Huang, Q; Song, YX; Chen, Y; Tang, Z
刊名COMPUTATIONAL MATERIALS SCIENCE
出版日期2017
卷号129页码:247-251
关键词Qubit Defect First-principle Calculations Spin Coherence Time
ISSN号0927-0256
DOI10.1016/j.commatsci.2016.12.032
文献子类期刊论文
英文摘要First-principles calculations in combination with group theory analyses were employed to study the spin polarized electronic structures of CBVN centers consisting of a nitrogen vacancy and a substitutional carbon atom in hexagonal boron nitride (h-BN) monolayer with different charge states. It is clarified that the paramagnetic neutral CBVN center is stable in the n-type h-BN monolayer. The neutral defect center possesses a triplet (S = 1) ground state and with two spin-conserved optical vertical transition. Its spin coherence time is estimated to be 3.9 ms at T = 0 K by a simple scheme combining the mean-field theory and the first-principles calculations. The results indicate that the neutral CBVN center is very suitable for achieving spin qubit. (C) 2017 Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000394065000030
源URL[http://ir.sinap.ac.cn/handle/331007/27245]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
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GB/T 7714
Cheng, GD,Zhang, YG,Yan, L,et al. A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application[J]. COMPUTATIONAL MATERIALS SCIENCE,2017,129:247-251.
APA Cheng, GD.,Zhang, YG.,Yan, L.,Huang, HF.,Huang, Q.,...&Tang, Z.(2017).A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application.COMPUTATIONAL MATERIALS SCIENCE,129,247-251.
MLA Cheng, GD,et al."A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application".COMPUTATIONAL MATERIALS SCIENCE 129(2017):247-251.

入库方式: OAI收割

来源:上海应用物理研究所

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