Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
文献类型：期刊论文
| 作者 | Yang, LF; Wang, T; Zou, Y; Lu, HL |
| 刊名 | NANOSCALE RESEARCH LETTERS
 |
| 出版日期 | 2017 |
| 卷号 | 12页码:- |
| 关键词 | Band Alignments Hfalo Dielectric Inp Atomic Layer Deposition |
| ISSN号 | 1556-276X |
| DOI | 10.1186/s11671-017-2104-y |
| 文献子类 | 期刊论文 |
| 英文摘要 | X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al2O3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 +/- 0.1 and 2.83 +/- 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs. |
| 语种 | 英语 |
| WOS记录号 | WOS:000400960100002 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/27265]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Yang, LF,Wang, T,Zou, Y,et al. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition[J]. NANOSCALE RESEARCH LETTERS,2017,12:-. |
| APA | Yang, LF,Wang, T,Zou, Y,&Lu, HL.(2017).Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.NANOSCALE RESEARCH LETTERS,12,-. |
| MLA | Yang, LF,et al."Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition".NANOSCALE RESEARCH LETTERS 12(2017):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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