Investigation of the damage behavior in CVD SiC irradiated with 70 keV He ions by NEXAFS, Raman and TEM
文献类型:期刊论文
作者 | Liu, M; Yang, XM; Gao, YT; Liu, RD; Huang, HF; Zhou, XT; Sham, TK |
刊名 | JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
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出版日期 | 2017 |
卷号 | 37期号:4页码:1253-1259 |
关键词 | Nexafs Raman Irradiation Amorphization Stacking Faults |
ISSN号 | 0955-2219 |
DOI | 10.1016/j.jeurceramsoc.2016.11.046 |
文献子类 | 期刊论文 |
英文摘要 | Chemical vapor deposited (CVD) SiC was irradiated with 70 keV He ions at room temperature. The damage behavior was investigated by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, Raman spectroscopy and transmission electron microscopy (TEM). NEXAFS spectra at the Si K-edge display the obvious decrease in intensity of crystalline peaks and near disappearance of the peak at 1852 eV, suggesting an increase in crystalline disorder resulting from an increased number of Si vacancies caused by irradiation. Raman spectra show the decomposition of crystalline Si-C bonds and the formation of homonuclear (Si-Si and C-C) bonds during irradiation. TEM results show the transition from slight disorder to full amorphization with increasing dose. The dose to amorphization (DTA) is estimated to be about 1 dpa. It is also found that high density of stacking faults in CVD SiC may contribute to the enhancement of amorphization resistance compared to single crystal beta-SiC. (C) 2016 Elsevier Ltd. All rights reserved. |
语种 | 英语 |
WOS记录号 | WOS:000394482700011 |
源URL | [http://ir.sinap.ac.cn/handle/331007/27360] ![]() |
专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
推荐引用方式 GB/T 7714 | Liu, M,Yang, XM,Gao, YT,et al. Investigation of the damage behavior in CVD SiC irradiated with 70 keV He ions by NEXAFS, Raman and TEM[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2017,37(4):1253-1259. |
APA | Liu, M.,Yang, XM.,Gao, YT.,Liu, RD.,Huang, HF.,...&Sham, TK.(2017).Investigation of the damage behavior in CVD SiC irradiated with 70 keV He ions by NEXAFS, Raman and TEM.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,37(4),1253-1259. |
MLA | Liu, M,et al."Investigation of the damage behavior in CVD SiC irradiated with 70 keV He ions by NEXAFS, Raman and TEM".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 37.4(2017):1253-1259. |
入库方式: OAI收割
来源:上海应用物理研究所
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