Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)(2)As-2
文献类型:期刊论文
作者 | Wang, R; Huang, ZX; Zhao, GQ; Yu, S; Deng, Z; Jin, CQ; Jia, QJ; Chen, Y; Yang, TY; Jiang, XM |
刊名 | AIP ADVANCES
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出版日期 | 2017 |
卷号 | 7期号:4页码:- |
ISSN号 | 2158-3226 |
DOI | 10.1063/1.4982713 |
文献子类 | 期刊论文 |
英文摘要 | Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS)Ba1-xKx(Zn1-yMny)(2)As-2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O-3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O-3 substrate with their magnetic polarization aligned almost solely on the film growth direction. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
语种 | 英语 |
WOS记录号 | WOS:000400396100017 |
源URL | [http://ir.sinap.ac.cn/handle/331007/27404] ![]() |
专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
推荐引用方式 GB/T 7714 | Wang, R,Huang, ZX,Zhao, GQ,et al. Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)(2)As-2[J]. AIP ADVANCES,2017,7(4):-. |
APA | Wang, R.,Huang, ZX.,Zhao, GQ.,Yu, S.,Deng, Z.,...&Cao, LX.(2017).Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)(2)As-2.AIP ADVANCES,7(4),-. |
MLA | Wang, R,et al."Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)(2)As-2".AIP ADVANCES 7.4(2017):-. |
入库方式: OAI收割
来源:上海应用物理研究所
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