Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature
文献类型：期刊论文
| 作者 | Zhang, S; Gibson, QD; Yi, W; Guo, J; Wang, Z; Zhou, YZ; Wang, HH; Cai, S; Yang, K; Li, AG |
| 刊名 | EPL
 |
| 出版日期 | 2017 |
| 卷号 | 117期号:4页码:- |
| ISSN号 | 0295-5075 |
| DOI | 10.1209/0295-5075/117/46001 |
| 文献子类 | 期刊论文 |
| 英文摘要 | We report high-pressure studies of the structural stability of Ru2Sn3, a new type of three-dimensional topological insulator (3D-TI) with unique quasi-one-dimensional Dirac electron states throughout the surface Brillouin zone of its one-atmosphere low-temperature orthorhombic form. Our in-situ high-pressure synchrotron x-ray diffraction and electrical resistance measurements reveal that upon increasing pressure the tetragonal-to-orthorhombic phase shifts to higher temperature. We find that the stability of the orthorhombic phase that hosts the non-trivial topological ground state can be pushed up to room temperature by an applied pressure of similar to 20 GPa. This is in contrast with the commonly known 3D-TIs whose ground state is usually destroyed under pressure. Our results indicate that pressure provides a possible pathway for realizing a room temperature topological insulating state in Ru2Sn3. Copyright (C) EPLA, 2017 |
| 语种 | 英语 |
| WOS记录号 | WOS:000401166400011 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/27421]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Zhang, S,Gibson, QD,Yi, W,et al. Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature[J]. EPL,2017,117(4):-. |
| APA | Zhang, S.,Gibson, QD.,Yi, W.,Guo, J.,Wang, Z.,...&Zhao, ZX.(2017).Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature.EPL,117(4),-. |
| MLA | Zhang, S,et al."Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature".EPL 117.4(2017):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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