Promising features of low-temperature grown Ge nanostructures on Si(001) substrates
文献类型：期刊论文
| 作者 | Wang, Z; Wang, SG; Yin, YF; Liu, T; Lin, DD; Li, DH; Yang, XJ; Jiang, ZM; Zhong, ZY |
| 刊名 | NANOTECHNOLOGY
 |
| 出版日期 | 2017 |
| 卷号 | 28期号:11页码:- |
| 关键词 | Semiconductor Nanostructure Photoluminescence Raman Spectra Molecular Beam Epitaxy |
| ISSN号 | 0957-4484 |
| DOI | 10.1088/1361-6528/aa5b3d |
| 文献子类 | 期刊论文 |
| 英文摘要 | High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si(001) substrates at 200 degrees C and ex situ annealing at 400 degrees C. Their structural properties are comprehensively characterized by atomic force microscopy, transmission electron microscopy and Raman spectroscopy. It is disclosed that they are almost defect free except for some defects at the Ge/Si interface and in the subsequent Si capping layer. The misfit strain in the nanostructure is substantially relaxed. Dramatically strong photoluminescence (PL) from the Ge nanostructures is observed. Detailed analyses on the power-and temperature-dependent PL spectra, together with a self-consistent calculation, indicate the confinement and the high quantum efficiency of excitons within the Ge nanostructures. Our results demonstrate that the Ge nanostructures obtained via the present feasible route may have great potential in. optoelectronic devices for. monolithic optical-electronic integration circuits. |
| 语种 | 英语 |
| WOS记录号 | WOS:000400813200001 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/27423]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Wang, Z,Wang, SG,Yin, YF,et al. Promising features of low-temperature grown Ge nanostructures on Si(001) substrates[J]. NANOTECHNOLOGY,2017,28(11):-. |
| APA | Wang, Z.,Wang, SG.,Yin, YF.,Liu, T.,Lin, DD.,...&Zhong, ZY.(2017).Promising features of low-temperature grown Ge nanostructures on Si(001) substrates.NANOTECHNOLOGY,28(11),-. |
| MLA | Wang, Z,et al."Promising features of low-temperature grown Ge nanostructures on Si(001) substrates".NANOTECHNOLOGY 28.11(2017):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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