Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films
文献类型：期刊论文
| 作者 | Hu, K; Yang, YJ; Hong, B; Zhao, JT; Luo, ZL; Li, XG; Zhang, XM; Gu, YL; Gao, XY; Gao, C |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2017 |
| 卷号 | 699页码:575-580 |
| 关键词 | Anisotropic Metal-insulator Transition Anisotropic Electronic Transport Epitaxial Strain Vanadium Dioxide Thin Film Stripe Domain Structure |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2016.12.412 |
| 文献子类 | 期刊论文 |
| 英文摘要 | This work reports the thickness dependence of the anisotropic electronic transport in strained VO2/TiO2 (110) epitaxial thin films with the aim of exploring the strain-modulated metal-insulator transition (MIT). The MIT temperature varies from around 349 K-341 K while increasing the film thickness, which is higher than the bulk MIT temperature of 340 K. More importantly, the electrical transport property is anisotropic along the in-plane [100] and [1-10] directions and the anisotropy is further improved in thicker films. Using synchrotron radiation X-ray reciprocal space mapping (RSM) and atomic force microscopy, the thickness-dependent strain induces different stripe phase states in the VO2 thin films and thus the emergence of the distinctive anisotropic electronic transport in the vicinity of the MIT. These results provide a better understanding of the crystalline-facet-dependent strain modulation of the MIT and offer a guide for designing metamaterials based on the anisotropic features of VO2 thin films. (C) 2016 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000393727500081 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/27486]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Hu, K,Yang, YJ,Hong, B,et al. Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,699:575-580. |
| APA | Hu, K.,Yang, YJ.,Hong, B.,Zhao, JT.,Luo, ZL.,...&Gao, C.(2017).Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films.JOURNAL OF ALLOYS AND COMPOUNDS,699,575-580. |
| MLA | Hu, K,et al."Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films".JOURNAL OF ALLOYS AND COMPOUNDS 699(2017):575-580. |
入库方式： OAI收割
来源：上海应用物理研究所
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