Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric
文献类型：期刊论文
| 作者 | Lei, B; Wang, NZ; Shang, C; Meng, FB; Ma, LK; Luo, XG; Wu, T; Sun, Z; Wang, Y; Jiang, Z |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2017 |
| 卷号 | 95期号:2页码:- |
| ISSN号 | 2469-9950 |
| DOI | 10.1103/PhysRevB.95.020503 |
| 文献子类 | 期刊论文 |
| 英文摘要 | We have developed a field-effect transistor (FET) device using a solid ion conductor (SIC) as the gate dielectric, which can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes and consequently control the physical properties and phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with T-c similar to 46.6 K for optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, by using a solid ion conductor as the gate dielectric, the SIC-FET device is able to induce much higher carrier doping in the bulk, suit many surface-sensitive experimental probes, and stabilize structural phases that are inaccessible in ordinary conditions. |
| 语种 | 英语 |
| WOS记录号 | WOS:000400593700001 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/27490]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Lei, B,Wang, NZ,Shang, C,et al. Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric[J]. PHYSICAL REVIEW B,2017,95(2):-. |
| APA | Lei, B.,Wang, NZ.,Shang, C.,Meng, FB.,Ma, LK.,...&Chen, XH.(2017).Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric.PHYSICAL REVIEW B,95(2),-. |
| MLA | Lei, B,et al."Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric".PHYSICAL REVIEW B 95.2(2017):-. |
入库方式： OAI收割
来源：上海应用物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。