Effect of grain boundary structures on the behavior of He defects in Ni: An atomistic study
文献类型：期刊论文
| 作者 | Gong, HF; Yan, Y; Zhang, XS; Lv, W; Liu, T; Ren, QS |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2017 |
| 卷号 | 26期号:9页码:- |
| 关键词 | Embedded-atom Potentials Fcc Metals Alpha-fe Helium Fusion Irradiation Energies Nickel Alloys Steel |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/26/9/093104 |
| 文献子类 | 期刊论文 |
| 英文摘要 | We investigated the effect of grain boundary structures on the trapping strength of He-N (N is the number of helium atoms) defects in the grain boundaries of nickel. The results suggest that the binding energy of an interstitial helium atom to the grain boundary plane is the strongest among all sites around the plane. The He-N defect is much more stable in nickel bulk than in the grain boundary plane. Besides, the binding energy of an interstitial helium atom to a vacancy is stronger than that to a grain boundary plane. The binding strength between the grain boundary and the He-N defect increases with the defect size. Moreover, the binding strength of the HeN defect to the Sigma 3 (1 (1) over bar2) [110] grain boundary becomes much weaker than that to other grain boundaries as the defect size increases. |
| WOS关键词 | EMBEDDED-ATOM POTENTIALS ; FCC METALS ; ALPHA-FE ; HELIUM ; FUSION ; IRRADIATION ; ENERGIES ; NICKEL ; ALLOYS ; STEEL |
| 语种 | 英语 |
| WOS记录号 | WOS:000409461000004 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/28624]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Gong, HF,Yan, Y,Zhang, XS,et al. Effect of grain boundary structures on the behavior of He defects in Ni: An atomistic study[J]. CHINESE PHYSICS B,2017,26(9):-. |
| APA | Gong, HF,Yan, Y,Zhang, XS,Lv, W,Liu, T,&Ren, QS.(2017).Effect of grain boundary structures on the behavior of He defects in Ni: An atomistic study.CHINESE PHYSICS B,26(9),-. |
| MLA | Gong, HF,et al."Effect of grain boundary structures on the behavior of He defects in Ni: An atomistic study".CHINESE PHYSICS B 26.9(2017):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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