PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation
文献类型：期刊论文
| 作者 | Cheng, GD; Chen, Y; Yan, L; Shen, RF |
| 刊名 | NUCLEAR SCIENCE AND TECHNIQUES
 |
| 出版日期 | 2017 |
| 卷号 | 28期号:8页码:- |
| 关键词 | Diamond |
| ISSN号 | 1001-8042 |
| DOI | 10.1007/s41365-017-0263-2 |
| 文献子类 | 期刊论文 |
| 英文摘要 | Radiation damage in 4H-SiC samples implanted by 70 keV oxygen ion beams was studied using photoluminescence and electron spin resonance techniques. ESR peak of g = 2.0053 and two zero-phonon lines were observed with the implanted samples. Combined with theoretical calculations, we found that the main defect in the implanted 4H-SiC samples was oxygen-vacancy complex. The calculated defect formation energies showed that the oxygen-vacancy centers were stable in n-type 4H-SiC. Moreover, the VSiOC0 and VSiOC-1 centers were optically addressable. The results suggest promising spin coherence properties for quantum information science. |
| WOS关键词 | DIAMOND |
| 语种 | 英语 |
| WOS记录号 | WOS:000408789500008 |
| 源URL | [http://ir.sinap.ac.cn/handle/331007/28771]  |
| 专题 | 上海应用物理研究所_中科院上海应用物理研究所2011-2017年 |
| 推荐引用方式 GB/T 7714 | Cheng, GD,Chen, Y,Yan, L,et al. PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation[J]. NUCLEAR SCIENCE AND TECHNIQUES,2017,28(8):-. |
| APA | Cheng, GD,Chen, Y,Yan, L,&Shen, RF.(2017).PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation.NUCLEAR SCIENCE AND TECHNIQUES,28(8),-. |
| MLA | Cheng, GD,et al."PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation".NUCLEAR SCIENCE AND TECHNIQUES 28.8(2017):-. |
入库方式： OAI收割
来源：上海应用物理研究所
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